Datasheet.kr   

K15J50D PDF 데이터시트 ( Data , Function )

부품번호 K15J50D 기능
기능 TK15J50D
제조업체 Toshiba Semiconductor
로고 Toshiba Semiconductor 로고 



전체 6 페이지

		

No Preview Available !

K15J50D 데이터시트, 핀배열, 회로
TK15J50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK15J50D
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.33 Ω (typ.)
High forward transfer admittance: Yfs= 8.0 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
15.9 MAX.
Unit: mm
Ф3.2 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
±30
15
60
210
360
15
21
150
55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
2.0 ± 0.3
1.0
0.3
0.25
5.45 ± 0.2
5.45 ± 0.2
123
1: Gate
2: Drain (Heatsink)
3: Source
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight : 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
0.595
50
°C/W
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.72 mH, RG = 25 Ω, IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2
3
1 2011-04-25




K15J50D pdf, 반도체, 판매, 대치품
RDS (ON) Tc
1.2
Common source
VGS = 10 V
1.0 Pulse Test
0.8
15
0.6 7.5
0.4 ID = 3.8 A
0.2
0
80 40 0 40 80 120 160
Case temperature Tc (°C)
TK15J50D
100 Common source
Tc = 25°C
Pulse Test
IDR VDS
10
10
15
3
1 VGS = 0 V
0.1
0 -0.4 -0.8 -1.2 -1.6 -2
Drain-source voltage VDS (V)
10000
1000
100
Capacitance – VDS
Ciss
Coss
10 Common source
VGS = 0 V
f =1MHz
Tc = 25°C
1
0.1 1
Crss
10 100
Drain-source voltage VDS (V)
Vth Tc
5 Common source
VDS = 10 V
ID = 1mA
4 Pulse Test
3
2
1
0
80 40
0
40 80 120 160
Case temperature Tc (°C)
PD Tc
400
300
200
100
0
0 40 80 120 160
Case temperature Tc (°C)
Dynamic input / output
characteristics
500 20
400
300
200
100
0
0
VDS
200V
VDD = 100 V
400V
16
12
VGS
Common source
ID = 15 A
Tc = 25°C
Pulse Test
8
4
10 20 30 40 50
Total gate charge Qg (nC)
0
60
4 2011-04-25

4페이지













구       성총 6 페이지
다운로드[ K15J50D.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

상호 : 아이지 인터내셔날

사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
K15J50D

TK15J50D

Toshiba Semiconductor
Toshiba Semiconductor

DataSheet.kr    |   2020   |  연락처   |  링크모음   |   검색  |   사이트맵