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부품번호 | AP05FN50I 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
▼ Fast trr Performance
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant
AP05FN50I
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
RDS(ON)
500V
1.8Ω
G ID 4.4A
S
Description
AP05FN50 series are specially designed as main switching devices
for universal 90~265VAC off-line AC/DC converter applications. It
provide high blocking voltage to overcome voltage surge and sag in
the toughest power system with the best combination of fast
switching design and cost-effectiveness.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
GD S
TO-220CFM(I)
Rating
500
+20
4.4
2.7
18
31.3
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
4
65
Unit
℃/W
℃/W
1
201211273
AP05FN50I
12
I D =1A
10
V DS =250V
V DS =300V
8
V DS =400V
6
4
2
0
0 10 20 30
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
Operation in this area
limited by RDS(ON)
100us
1 1ms
10ms
100ms
0.1 1s
T c =25 o C
Single Pulse
0.01
1
10 100
V DS , Drain-to-Source Voltage (V)
DC
1000
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off) tf
f=1.0MHz
1600
1200
C iss
800
400
C oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AP05FN50I | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP05FN50I-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |