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부품번호 | AP02N60J-H-HF-3 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP02N60H/J-H-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Repetitive Avalanche Rated
D
Fast Switching Speed
RoHS-compliant, halogen-free
G
S
BV DSS
RDS(ON)
ID
700V
8.8Ω
1.4A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
D (tab)
G D S TO-252 (H)
The AP02N60H-H-HF-3 is in the TO-252 package which is widely preferred for
commercial and industrial surface mount applications such as medium-power
AC/DC converters. The through-hole TO-251 version (AP02N60J-H-HF-3) is
available where a small PCB footprint or attached heatsink is required.
GD
S
Absolute Maximum Ratings
D (tab)
TO-251 (J)
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
EAS
IAR
EAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Rating
700
± 30
1.4
0.9
5.6
39
0.31
49
1.4
0.5
-55 to 150
-55 to 150
Symbol
Rthj-a
Rthj-a
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Maximum Thermal Resistance, Junction-ambient
Value
3.2
62.5
110
Units
V
V
A
A
A
W
W/°C
mJ
A
mJ
°C
°C
Unit
°C/W
°C/W
°C/W
Ordering Information
AP02N60H-H-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel)
AP02N60J-H-HF-3TB : in RoHS-compliant halogen-free TO-251 shipped in tubes (80pcs/tube)
©2011 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200807222-3 1/6
Advanced Power
Electronics Corp.
Typical Electrical Characteristics (cont.)
16
I D =1.4A
12
V DS =320V
V DS =400V
V DS =480V
8
1000
100
AP02N60H/J-H-HF-3
f=1.0MHz
C iss
4
0
0 4 8 12 16 20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
10
100us
1 1ms
10ms
0.1 100ms
DC
T c =25 o C
Single Pulse
0.01
1
10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
C oss
C rss
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveforms
©2011 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
4/6
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부품번호 | 상세설명 및 기능 | 제조사 |
AP02N60J-H-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |