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부품번호 | AP9435GK-HF-3 기능 |
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기능 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
전체 5 페이지수
Advanced Power
Electronics Corp.
AP9435GK-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristics
RoHS-compliant, Halogen-free
D
BV DSS
-30V
R DS(ON)
50mΩ
G ID -6A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
D
The AP9435GK-HF-3 is in the popular SOT-223 small surface-mount package
which is widely used in commercial and industrial applications where a small
board footprint is required.
This device is well suited for use in medium current applications such as
load switches.
SOT-223
S
D
G
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TA =25°C
ID at TA= 70°C
IDM
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
± 20
-6
-4.8
-20
2.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
°C
°C
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Value
45
Unit
°C/W
Ordering Information
AP9435GK-HF-3TR RoHS-compliant halogen-free SOT-223, shipped on tape and reel, 3000pcs/ reel
©2011 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201106024-3 1/5
Advanced Power
Electronics Corp.
Typical Electrical Characteristics (cont.)
12 10000
AP9435GK-HF-3
f=1.0MHz
10
I D = -4A
V DS = -24V
8
6
1000
Ciss
4
100
Coss
Crss
2
0
0 4 8 12 16 20
Q G , Total Gate Charge (nC)
10
1 5 9 13 17 21 25 29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
Operation in this area
limited by RDS(ON)
1
1ms
10ms
100ms
01
T A =25 o C
Single Pulse
1s
DC
0 01
0 01
0 1 1 10
-V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
1
DUTY=0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor t/T
Peak Tj PDM x Rthja
Rthja 120°C/W
Ta
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
-4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
©2011 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
4/5
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AP9435GK-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |