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부품번호 | AP9561GM 기능 |
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기능 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP9561GM
RoHS-compliat Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
Description
D
D
D
D
SO-8
G
S
S
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
-40V
18mΩ
-9.4A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating
-40
+20
-9.4
-7.5
-40
2.5
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
200806201
AP9561GM
14
I D = -9A
12 V DS = -32V
10
8
6
4
2
0
0 10 20 30 40 50
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10 100us
1ms
1 10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.1 1 10
-V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
f=1.0MHz
2400
2000
C1600 iss
1200
800
C400 oss
C rss
0
1 5 9 13 17 21 25 29
-V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
-4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AP9561GH-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |