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PDF CS20N60AND Data sheet ( Hoja de datos )
| Número de pieza | CS20N60AND | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | TGW | |
| Logotipo |  |
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Huajing Discrete Devices
Silicon N-Channel Power MOSFET
○R
CS20N60AND
General Description：
CS20N60AND, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-3P(N), which accords
with the RoHS standard.
Features：
z Fast Switching
z Low ON Resistance(Rdson≤0.32Ω)
z Low Gate Charge (Typical Data:95nC)
z Low Reverse transfer capacitances(Typical:38pF)
z 100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
VESD(G-S)
TJ，Tstg
TL
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
600
20
280
0.23
Rating
600
20
13
80
±30
1500
250
7.1
5.0
280
2.24
6000
150，–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
℃
℃
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2011
1 page  
Huajing Discrete Devices
○R CS20N60AND
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10 2011
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS20N60AND.PDF ] | |
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