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PDF R1LV0408DSB-5S Data sheet ( Hoja de datos )
| Número de pieza | R1LV0408DSB-5S | |
| Descripción | 4M SRAM | |
| Fabricantes | Renesas | |
| Logotipo |  |
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R1LV0408D Series
4M SRAM (512-kword × 8-bit)
REJ03C0310-0100
Rev.1.00
May.24.2007
Description
The R1LV0408D is a 4-Mbit static RAM organized 512-kword × 8-bit, fabricated by Renesas’s high-
performance 0.15µm CMOS and TFT technologies. R1LV0408D Series has realized higher density,
higher performance and low power consumption. The R1LV0408D Series offers low power standby
power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-
pin TSOP II and 32-pin STSOP.
Features
• Single 3 V supply: 2.7 V to 3.6 V
• Access time: 55/70 ns (max)
• Power dissipation:
Standby: 3 µW (typ)
• Equal access and cycle times
• Common data input and output.
Three state output
• Directly TTL compatible.
All inputs and outputs
• Battery backup operation.
Rev.1.00, May.24.2007, page 1 of 12
1 page  
R1LV0408D Series
Operation Table
WE# CS# OE#
Mode
× H×
Not selected
H LH
Output disable
HLL
Read
L LH
Write
L LL
Write
Note: H: VIH, L: VIL, ×: VIH or VIL
VCC current
I ,I
SB SB1
I
CC
I
CC
ICC
ICC
I/O0 to I/O7
High-Z
High-Z
Dout
Din
Din
Ref. cycle
Read cycle
Write cycle (1)
Write cycle (2)
Absolute Maximum Ratings
Parameter
Power supply voltage relative to VSS
Terminal voltage on any pin relative to VSS
Power dissipation
Operating temperature
Symbol
VCC
VT
PT
Topr
Storage temperature range
Storage temperature range under bias
Tstg
Tbias
Notes: 1. VT min: −3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +4.6 V.
Value
−0.5 to +4.6
−0.5*1 to VCC + 0.5*2
0.7
R ver.
0 to +70
I ver.
−40 to +85
−65 to +150
R ver.
0 to +70
I ver.
−40 to +85
Unit
V
V
W
°C
°C
°C
DC Operating Conditions
Parameter
Symbol
Min
Supply voltage
Input high voltage
Input low voltage
Ambient temperature range R ver.
V
CC
V
SS
V
IH
VIL
Ta
2.7
0
2.2
−0.3*1
0
I ver.
−40
Note: 1. VIL min: −3.0 V for pulse half-width ≤ 30 ns.
Typ Max Unit
3.0 3.6 V
0 0V
V + 0.3
CC
V
0.6 V
+70 °C
+85
Rev.1.00, May.24.2007, page 5 of 12
5 Page 
R1LV0408D Series
Write Timing Waveform (2) (OE# Low Fixed)
Address
CS#
WE#
Dout
Din
tWC
Valid address
tCW
tWR
*8 tAW
tWP
tAS
tWHZ
tOH
tOW
*9 *10
High impedance
tDW tDH
Valid data
*11
Rev.1.00, May.24.2007, page 11 of 12
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet R1LV0408DSB-5S.PDF ] | |
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