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부품번호 | R1WV3216RSD-8S 기능 |
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기능 | 32Mb Advanced LPSRAM | ||
제조업체 | Renesas Technology | ||
로고 | |||
R1W V3216R Series
32Mb Advanced LPSRAM (2M wordx16bit)
REJ03C0215-0300Z
Rev.3.00
2008.03.03
Description
The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit,
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1WV3216R Series is suitable for memory applications where a simple interfacing , battery operating and
battery backup are the important design objectives.
The R1WV3216R Series is made by stacked-micro-package technology and two chips of 16Mbit Advanced
LPSRAMs are assembled in one package.
The R1WV3216R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x
10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch
of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring
pattern of printed circuit boards.
Features
• Single 2.7-3.6V power supply
• Small stand-by current:4µA (3.0V, typ.)
• Data retention supply voltage =2.0V
• No clocks, No refresh
• All inputs and outputs are TTL compatible.
• Easy memory expansion by CS1#, CS2, LB# and UB#
• Common Data I/O
• Three-state outputs: OR-tie capability
• OE# prevents data contention on the I/O bus
• Process technology: 0.15um CMOS
REJ03C0215-0300Z Rev.3.00 2008.03.03
page 1 of 15
R1W V3216R Series
Block Diagram
A0
A20
CS2
CS1#
LB#
UB#
BYTE#
WE#
OE#
Memory Array
1048576 Words
x 16BITS
OR
2097152 Words
x 8BITS
CLOCK
GENERATOR
x8/x16
SWITCHING
CIRCUIT
16Mb Advanced LPSRAM #1
16Mb Advanced LPSRAM #2
Note: BYTE# pin is supported by only 52-pin µTSOP type.
DQ0
DQ7
DQ8
DQ15
/ A-1
Vcc
Vss
REJ03C0215-0300Z Rev.3.00 2008.03.03
page 4 of 15
4페이지 R1W V3216R Series
Capacitance
Parameter
Symbol Min. Typ.
Input capacitance
C in - -
Input / output capacitance C I/O
-
-
Note 1. This parameter is sampled and not 100% tested.
Max.
20
20
Unit
pF
pF
(Ta = +25ºC, f =1MHz)
Test conditions Note
V in = 0V
1
V I/O = 0V
1
AC Characteristics
Test Conditions (Vcc=2.7~3.6V, Ta = 0~+70ºC / -40~+85ºC *)
• Input pulse levels: VIL= 0.4V,VIH=2.4V
• Input rise and fall time : 5ns
• Input and output timing reference levels : 1.4V
• Output load : See figures (Including scope and jig)
1.4V
RL=500Ω
DQ
CL=30pF
Note: Temperature range depends on R/I-version. Please see table on page 2.
REJ03C0215-0300Z Rev.3.00 2008.03.03
page 7 of 15
7페이지 | |||
구 성 | 총 18 페이지수 | ||
다운로드 | [ R1WV3216RSD-8S.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
R1WV3216RSD-8S | 32Mb Advanced LPSRAM | Renesas Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |