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부품번호 | R1WV6416RSA-5S 기능 |
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기능 | 64Mb Advanced LPSRAM | ||
제조업체 | Renesas Technology | ||
로고 | |||
전체 20 페이지수
R1WV6416R Series
64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
REJ03C0368-0100
Rev.1.00
2009.05.07
Description
The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by
16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.
The R1WV6416R Series is suitable for memory applications where a simple interfacing, battery operating
and battery backup are the important design objectives.
The R1WV6416R Series is provided in 48-pin thin small outline package [TSOP (I): 12mm x 20mm with
pin pitch of 0.5mm], 52-pin micro thin small outline package [µTSOP (II): 10.79mm x 10.49mm with pin pitch
of 0.4mm] and 48-ball fine pitch ball grid array [f-BGA] package. It gives the best solution for compaction of
mounting area as well as flexibility of wiring pattern of printed circuit boards.
Features
• Single 2.7~3.6V power supply
• Small stand-by current: 8 µA (3.0V, typical)
• No clocks, No refresh
• All inputs and outputs are TTL compatible.
• Easy memory expansion by CS1#, CS2, LB# and UB#
• Common Data I/O
• Three-state outputs: OR-tie Capability
• OE# prevents data contention on the I/O bus
Ordering Information
Type No.
R1WV6416RSA-5S%
R1WV6416RSA-7S%
R1WV6416RSD-5S%
R1WV6416RSD-7S%
R1WV6416RBG-5S%
R1WV6416RBG-7S%
Access time
55 ns
70 ns
55 ns
70 ns
55 ns
70 ns
Package
12mm x 20mm 48-pin plastic TSOP (I)
(normal-bend type) (48P3R)
350 mil 52-pin plastic μ-TSOP (II)
(normal-bend type) (52PTG)
f-BGA 0.75mm pitch 48-ball
% - Temperature version; see table below
% Temperature Range
R 0 ~ +70 °C
I -40 ~ +85 °C
REJ03C0368-0100, Rev.1.00, 2009.05.07
Page 1 of 16
R1WV6416R Series
Block Diagram
A0
A1
A21
CS2
CS1#
LB#
UB#
BYTE#
WE#
OE#
ADDRESS
BUFFER
ROW
DECODER
MEMORY ARRAY
2M-word x16-bit
or
4M-word x 8-bit
SENSE / WRITE AMPLIFIER
COLUMN DECODER
CLOCK
GENERATOR
DQ
BUFFER
DATA
SELECTOR
DQ
BUFFER
X8 / x16
CONTROL
32Mb SRAM #1
32Mb SRAM #2
Note: BYTE# pin is supported for 48-pin TSOP (I) and 52-pin µTSOP (II) packages.
DQ0
DQ1
DQ7
DQ8
DQ9
DQ15
/ A -1
Vcc
Vss
REJ03C0368-0100, Rev.1.00, 2009.05.07
Page 4 of 16
4페이지 R1WV6416R Series
Capacitance
Parameter
Symbol Min. Typ.
Input capacitance
C in -
-
Input / output capacitance
C I/O
-
-
Note1.This parameter is sampled and not 100% tested.
Max.
20
20
Unit
pF
pF
(Ta =25°C, f =1MHz)
Test conditions
Note
Vin =0V
1
V I/O =0V
1
AC Characteristics
Test Conditions (Vcc = 2.7V ~ 3.6V, Ta = 0 ~ +70°C / -40 ~ +85°C*1)
• Input pulse levels: VIL = 0.4V, VIH = 2.4V
• Input rise and fall time: 5ns
• Input and output timing reference level: 1.4V
• Output load: See figures (Including scope and jig)
1.4V
RL = 500 ohm
DQ
CL = 30 pF
Note1. Ambient temperature range depends on R/I-version. Please see table on page 1.
REJ03C0368-0100, Rev.1.00, 2009.05.07
Page 7 of 16
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
R1WV6416RSA-5S | 64Mb Advanced LPSRAM | Renesas Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |