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부품번호 | RFV15TJ6S 기능 |
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기능 | Super Fast Recovery Diode | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 6 페이지수
Super Fast Recovery Diode
RFV15TJ6S
Data Sheet
lSerise
Standard Fast Recovery
lDimensions (Unit : mm)
f3.1±0.1
10.2±0.2
4.5±0.1
2.6±0.1
lStructure
lApplication
General rectification
For PFC
(CCM : Continuous Current Mode)
RFV15
TJ6S 1
2
lFeatures
1) Hyper fast recovery / Hard recovery type
2) Ultra low switching loss
1.4±0.2
2.6±0.1
3) High current overload capacity
lConstruction
Silicon epitaxial planar type
2.54±0.1
0.83±0.1
5.08±0.1
0.6±0.1
ROHM : TO-220ACFP
1 : Manufacture year, week,day, package code
2 : Serial number
Cathode Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
600 V
Reverse voltage
VR Direct reverse voltage
600 V
Average current
Io 60Hz half sin wave , resistive load Tc=30°C
15
A
Non-repetitive forward surge current IFSM 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C
150
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
VF
IF=15A
Tj=25°C 1.6
Tj=125°C -
Reverse current
IR
VR=600V
Tj=25°C
Tj=125°C
-
-
Reverse recovery time
IF=0.5A, IR=1A, Irr=0.25×IR -
trr
IF=15A, VR=400V, dIF/dt=-200A/ms -
Reverse recovery current
Reverse recovery charges
Forward recovery time
Forward recovery voltage
IRp
Qrr
IF=15A, VR=400V
dIF/dt=-200A/ms
Tj=125°C
-
-
tfr IF=15A, dIF/dt=200A/ms, -
VFp VFR=1.1xVFmax -
Thermal resistance
Rth(j-a)
Rth(j-c)
Junction to ambient
Junction to case
-
-
Typ.
2.3
1.55
0.03
10
20
30
6.5
200
150
5.5
-
-
Max. Unit
2.8 V
-V
10 mA
200 mA
30 ns
50 ns
-A
- nC
- ns
-V
6.5 °C/W
2.8 °C/W
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.10 - Rev.A
RFV15TJ6S
lElectrical characteristic curves
Data Sheet
70
60 D.C.
50 D = 0.5
half sin wave
40
D = 0.2
30 D = 0.1
20
10
0
0
Tj = 150°C
5 10 15 20
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
25
24
22
20 IF=2IO
18
IF=IO
16
14
12
10 IF=IO /2
8
6
4 VR = 400V
IO = 15A
2 Tj = 100°C
0
0 200 400 600 800 1000 1200
RATE OF CHANGE OF CURRENT : -di/dt(A/ms)
di/dt-IRp CHARACTERISTICS
90
80
VR = 400V
IO = 15A
70 Tj = 100°C
60
50 IF=IO
IF=2IO
40
30
20
IF=IO /2
10
0
0 200 400 600 800 1000 1200
RATE OF CHANGE OF CURRENT : -di/dt(A/ms)
di/dt-trr CHARACTERISTICS
350
300
IF=2IO
250
200 IF=IO
150 IF=IO /2
100
50
0
0
VR = 400V
IO = 15A
Tj = 100°C
200 400 600 800 1000 1200
RATE OF CHANGE OF CURRENT : -di/dt(A/ms)
di/dt-Qrr CHARACTERISTICS
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
4/5
2014.10 - Rev.A
4페이지 | |||
구 성 | 총 6 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
RFV15TJ6S | Super Fast Recovery Diode | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |