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부품번호 | P5NK100Z 기능 |
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기능 | STP5NK100Z | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 15 페이지수
STP5NK100Z, STF5NK100Z
STW5NK100Z
N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247
SuperMESH3™ Power MOSFET
Features
Type
STF5NK100Z
STP5NK100Z
STW5NK100Z
VDSS
(@TJMAX)
RDS(on)max
1000 V
< 3.7 Ω
1000 V
< 3.7 Ω
1000 V
< 3.7 Ω
ID
3.5 A
3.5 A
3.5 A
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Applications
■ Switching application
Description
The new SuperMESH™ series of Power
MOSFETS is the result of further design
improvements on ST's well-established strip-
based PowerMESH™ layout. In addition to
significantly lower on-resistance, the device offers
superior dv/dt capability to ensure optimal
performance even in the most demanding
applications. The SuperMESH™ devices further
complement an already broad range of innovative
high voltage MOSFETs, which includes the
revolutionary MDmesh™ products.
Table 1. Device summary
Order code
Marking
STF5NK100Z
STP5NK100Z
STW5NK100Z
F5NK100Z
P5NK100Z
W5NK100Z
TO-220
3
2
1
TO-220FP
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2)
G(1)
Package
TO-220FP
TO-220
TO-247
S(3)
AM01476v1
Packaging
Tube
Tube
Tube
May 2009
Doc ID 10850 Rev 5
1/15
www.st.com
15
Electrical characteristics
STP5NK100Z, STF5NK100Z, STW5NK100Z
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
Tc = 125 °C
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VGS = 0)
VGS = ± 20 V
Gate threshold voltage
VDS = VGS, ID = 100 µA
Static drain-source on
resistance
VGS = 10 V, ID = 1.75 A
Min. Typ. Max. Unit
1000
V
1 µA
50 µA
±10 µA
3 3.75 4.5 V
2.7 3.7 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance VDS =15 V, ID = 1.75 A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz,
VGS=0
-4
1154
- 106
21.3
S
pF
pF
pF
Cosseq(2)
Equivalent output
capacitance
VGS=0, VDS =0 V to 800 V - 46.8
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=500 V, ID= 1.75 A,
RG=4.7 Ω, VGS=10 V
(see Figure 21)
22.5
7.7
-
51.5
19
ns
ns
ns
ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=800 V, ID = 3.5 A
VGS =10 V
(see Figure 22)
42 59 nC
- 7.3
nC
21.7 nC
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/15 Doc ID 10850 Rev 5
4페이지 STP5NK100Z, STF5NK100Z, STW5NK100Z
Figure 8. Output characteristics
Electrical characteristics
Figure 9. Transfer characteristics
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
Doc ID 10850 Rev 5
7/15
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