PDF AS5LC512K16 Data sheet ( Hoja de datos )

Número de pieza	AS5LC512K16
Descripción	512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Fabricantes	Micross Components
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No Preview Available ! 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 10, 15 & 20ns • Available in Mil-Temp, Enhanced & Industrial Ranges • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE\ and OE\ operations • CE\ power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Data control for upper and lower bytes • Single power supply: VDD=3.3V ±0.5% • Package: 44-pin TSOPII •TSOPII in copper lead frame for superior thermal performance • RoHs compliant options available Consult factory for /XT product. FUNCTIONAL BLOCK DIAGRAM A0-A18 DECODER 512K x 16 MEMORY ARRAY PRELIMINARY SRAM AS5LC512K16 PIN CONFIGURATIONS 44-pin TSOPII (DGC & DGCR) A0 1 A1 2 A2 3 A3 4 A4 5 CE 6 I/O0 7 I/O1 8 I/O2 9 I/O3 10 VDD 11 GND 12 I/O4 13 I/O5 14 I/O6 15 I/O7 16 WE 17 A5 18 A6 19 A7 20 A8 21 A9 22 44 A17 43 A16 42 A15 41 OE 40 UB 39 LB 38 I/O15 37 I/O14 36 I/O13 35 I/O12 34 GND 33 VDD 32 I/O11 31 I/O10 30 I/O9 29 I/O8 28 A18 27 A14 26 A13 25 A12 24 A11 23 A10 A0ͲA18 I/OoͲI/O15 CE\ OE\ WE\ LB\ UB\ NC VDD GND AddressInputs DataInputs/Outputs ChipEnableInput OutputEnableInput WriteEnableInput LowerͲbyteControl(I/O0ͲI/O7) UpperͲbyteControl(I/O8ͲI/O15) NoConnection Power Ground VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT CE OE CONTROL WE CIRCUIT UB LB COLUMN I/O For more products and information please visit our web site at www.micross.com GENERAL DESCRIPTION The Micross AS5LC512K16 is a high-speed, 8M-bit static RAM organized as 512K words by 16 bits. It is fabricated using Mi- cross’ high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE\ is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE\ and OE\. The active LOW Write Enable (WE\) controls both writing and reading of the memory. A data byte allows Upper Byte (UB\) and Lower Byte (LB\) access. The AS5LC512K16 is packaged in a JEDEC standard 44-pin TSOPII with copper lead frame for superior thermal perfor- mance. RoHs compliant options are available. AS5LC512K16 Rev. 0.1 09/11 Micross Components reserves the right to change products or speciﬁcations without notice. 1 1 page PRELIMINARY SRAM AS5LC512K16 AC WAVEFORMS READ CYCLE NO. 11,2 (Address Controlled) (CE\ = OE\ = V ) IL ADDRESS DOUT t RC PREVIOUS DATA VALID t OHA t AA t OHA DATA VALID READ1.eps READ CYCLE NO. 21,3(CE\ and OE\ Controlled) ADDRESS OE CE DOUT t LZCE HIGH-Z t RC t AA t DOE t LZOE t ACE t HZCE DATA VALID NOTES: 1. WE\ is HIGH for a Read Cycle. 2. The device is continuously selected. OE\, CE\, UB\ = VIL. 3. Address is valid prior to or coincident with CE\ LOW transition. t OHA t HZOE CE_RD2.eps AS5LC512K16 Rev. 0.1 09/11 Micross Components reserves the right to change products or speciﬁcations without notice. 5 5 Page PRELIMINARY SRAM AS5LC512K16 ORDERING INFORMATION 44ͲpinTSOPIIͲCopperLeadFrameͲPb/SnLeadFinish Example:AS5SLC256K16DGCͲ10/IT Package Speed DeviceNumber Type (ns) Option** Process AS5LC512K16 DGC Ͳ10 L /* AS5LC512K16 DGC Ͳ15 L /* AS5LC512K16 DGC Ͳ20 L /* 44ͲpinTSOPIIͲCopperLeadFrameͲNiPdAuLeadFinish(RoHSCompliant) Example:AS5LC256K16DGCRͲ10/IT Package Speed DeviceNumber Type (ns) Option** Process AS5LC512K16 DGCR Ͳ10 L /* AS5LC512K16 DGCR Ͳ15 L /* AS5LC512K16 DGCR Ͳ20 L /* AVAILABLE PROCESSES IT = Industrial Temperature Range ET = Enhanced Temperature Range XT = Military Temperature Range *OPTION DEFINITIONS L = 2V Data Retention / Low Power -40oC to +85oC -40oC to +105oC -55oC to +125oC (Consult Factory) AS5LC512K16 Rev. 0.1 09/11 11 Micross Components reserves the right to change products or speciﬁcations without notice. 11 Page

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AS5LC512K16	512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM	Micross Components

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