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부품번호 | H55S5122EFR-A3M 기능 |
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기능 | 512Mbit (16Mx32bit) Mobile SDR Memory | ||
제조업체 | Hynix Semiconductor | ||
로고 | |||
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
Specification of
512M (16Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x32
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.2 / Sep. 2010
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512Mbit (16Mx32bit) Mobile SDR Memory
H55S5122EFR Series / H55S5132EFR Series
INFORMATION for Hynix KNOWN GOOD DIE
With the advent of Multi-Chip package (MCPs), Package on Package (PoP) and system in a package (SiP) applications,
customer demand for Known Good Die (KGD) has increased.
Requirements for smaller form factors and higher memory densities are fueling the need for Wafer-level memory solu-
tions due to their superior flexibility. Hynix Known Good Die (KGD) products can be used in packaging technologies
such as systems-in-a-package (SIPs) and multi-chip packages (MCPs) to reduce the board area required, making them
ideal for hand-held PCs, and many other portable digital applications.
Hynix Mobile DRAM will be able to continue its constant effort of enabling the Advanced package products of all appli-
cation customers.
- Please Contact Hynix Office for Hynix KGD product availability and informations.
Rev 1.2 / Sep. 2010
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512Mbit (16Mx32bit) Mobile SDR Memory
H55S5122EFR Series / H55S5132EFR Series
BALL DESCRIPTION
SYMBOL
CLK
CKE
CS
BA0, BA1
A0 ~ A13
RAS, CAS, WE
DQM0 ~ DQM3
DQ0 ~ DQ31
VDD/VSS
VDDQ/VSSQ
NC
TYPE
DESCRIPTION
INPUT
Clock: The system clock input. All other inputs are registered to the SDRAM on the
rising edge of CLK
INPUT
Clock Enable: Controls internal clock signal and when deactivated, the SDRAM will
be one of the states among power down, suspend or self refresh
INPUT Chip Select: Enables or disables all inputs except CLK, CKE, DQM0~DQM3
INPUT
Bank Address: Selects bank to be activated during RAS activity
Selects bank to be read/written during CAS activity
INPUT
For 1KBytes Page Size, Row Address: RA0 ~ RA13, Column Address: CA0 ~ CA7
For 2KBytes Page Size, Row Address: RA0 ~ RA12, Column Address: CA0 ~ CA8
Auto-precharge flag: A10
INPUT
Command Inputs: RAS, CAS and WE define the operation
Refer function truth table for details
INPUT
Data Mask: Controls output buffers in read mode and masks input data in write
mode
I/O Data Input/Output: Multiplexed data input/output pin
SUPPLY Power supply for internal circuits
SUPPLY Power supply for output buffers
- No connection
Rev 1.2 / Sep. 2010
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부품번호 | 상세설명 및 기능 | 제조사 |
H55S5122EFR-A3M | 512Mbit (16Mx32bit) Mobile SDR Memory | Hynix Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |