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PDF 2SC2130 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2130 | |
| Descripción | NPN Transistor | |
| Fabricantes | JIANGSU CHANGJIANG | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC2130 TRANSISTOR (NPN)
FEATURES
z High DC Current Gain
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
45
40
5
0.8
600
208
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE
Cob
fT
Test conditions
IC= 0.1mA,IE=0
IC=10mA,IB=0
IE=0.1mA,IC=0
VCB=35V,IE=0
VCE=25V,IB=0
VEB=5V,IC=0
VCE=1V, IC=100mA
IC=500mA,IB=20mA
VCE=1V, IC=10mA
VCB=10V,IE=0, f=1MHz
VCE=5V,IC=10mA
Min Typ Max Unit
45 V
40 V
5V
0.1 μA
0.1 μA
0.1 μA
100 320
0.5 V
0.8 V
13 pF
100 MHz
CLASSIFICATION OF hFE
RANK
RANGE
O
100-200
Y
160-320
B,Mar,2012
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC2130.PDF ] | |
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