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PDF STK900 Data sheet ( Hoja de datos )
| Número de pieza | STK900 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STK900 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Gre
Pro
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STK900
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
100V
1A
1.9 @ VGS=10V
2.2 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D
SOT-89
S
D
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage d
VGS Gate-Source Voltage
ID Drain Current-Continuous
IDM -Pulsed a
TA=25°C
TA=70°C
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
1
0.8
3.16
1.1
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Jun,22,2011
www.samhop.com.tw
1 page  
STK900
Ver 1.0
V DS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
Unclamped Inductive Test Circuit
Figure 13a.
V(BR )DS S
tp
IAS
Unclamped Inductive Waveforms
Figure 13b.
100
10-1
10-2
D=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
10-3
10-4
10-3
10-2
10-1
PDM
t1
t2
1. RӰJA (t)=r (t) * RӰJA
2. RӰJA=See Datasheet
3. TJM-TA = P* RӰJA (t)
4. Duty Cycle, D=t1/t2
100 101 102
Square Wave Pulse Duration (msec)
Figure 14. Normalized Thermal Transient Impedance Curve
Jun,22,2011
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STK900.PDF ] | |
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