|
|
|
부품번호 | STU664S 기능 |
|
|
기능 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
제조업체 | SamHop Microelectronics | ||
로고 | |||
STU664S
SamHop Microelectronics Corp.
STD664SGreen
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
60V 30A
20 @VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO-252AA(D-PAK)
G
DS
STD SERIES
TO-251(I-PAK)
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed a
TC=25°C
TC=70°C
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
60
±20
30
24
88
100
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jun,05,2013
www.samhop.com.tw
STU664S
STD664S
90
ID=15A
75
60
45
125 C
30
15 75 C
25 C
0
0 2 4 6 8 10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
3000
2500
2000
Ciss
1500
1000
Coss
500
Crss
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.0
20
125 C
10
5
75 C
25 C
1
0 0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=30V
8 ID=15A
6
4
2
0
0 5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
1000
100
10
TD(off )
TD(on)
Tr
Tf
VDS=30V,ID=1A
VGS=10V
1
1 10
Rg, Gate Resistance(Ω )
100
Figure 11. switching characteristics
4
100
10
RDS(ON) Limit
100u1s0us
D1C0ms1ms
1
VGS=10V
Single Pulse
TC=25 C
0.1
0.1 1
10 100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Jun,05,2013
www.samhop.com.tw
4페이지 STU664S
STD664S
Ver 1.0
E
b2
L3
D1
1
L4
e
E1 D
23
b1
b
1
DETAIL "A"
A
C
TO-252
H
L2
SYMBOLS
A
A1
b
b1
b2
C
D
D1
E
E1
e
H
L
L1
L2
L3
L4
1
L A1
L1 DETAIL "A"
MILLIMETERS
MIN MAX
2.100
2.500
0.000
0.400
0.200
0.889
0.770
1.140
4.800
5.460
0.400
0.600
5.300
6.223
4.900
5.515
6.300
4.400
6.731
5.004
2.290 REF
8.900
10.400
1.397
1.770
2.743 REF.
0.508 REF.
0.890
1.700
0.500
1.100
0° 10°
7° REF.
INCHES
MIN MAX
0.083
0.098
0.000
0.008
0.016
0.030
0.035
0.045
0.189
0.016
0.215
0.024
0.209
0.245
0.193
0.217
0.248
0.173
0.265
0.197
0.090 BSC
0.350
0.409
0.055
0.070
0.108 REF.
0.020 REF.
0.035
0.067
0.020
0.043
0° 10°
7° REF.
Jun,05,2013
7 www.samhop.com.tw
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ STU664S.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
STU664S | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |