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부품번호 | STU612D 기능 |
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기능 | Dual Enhancement Mode Field Effect Transistor | ||
제조업체 | SamHop | ||
로고 | |||
STU612DGreen
Product
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Ver 1.0
PRODUCT SUMMARY (N-Channel)
VDSS
ID
60V 8.6A
RDS(ON) (mΩ) Max
76 @ VGS=10V
90 @ VGS=4.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID
-60V
-7.3A
RDS(ON) (mΩ) Max
110 @ VGS=-10V
145 @ VGS=-4.5V
D1/D2
S1
G1
S2 G2
TO-252-4L
D1 D2
G1 G2
S 1 N-ch
S 2 P-ch
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
N-Channel P-Channel
VDS Drain-Source Voltage
VGS Gate-Source Voltage
60 -60
±20 ±20
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
8.6 -7.3
6.9 -5.8
IDM -Pulsed b
25 -21
EAS Sigle Pulse Avalanche Energy d
20 30
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
10.5
6.7
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case a
Thermal Resistance, Junction-to-Ambient a
12 °C/W
60 °C/W
Details are subject to change without notice.
1
Mar,05,2009
www.samhop.com.tw
STU612D
N-Channel
20
16
12
V GS =10V
V GS =5V
V GS =4V
V GS =3.5V
8
V GS =3V
4
0
0 0.5 1 1.5 2 2.5 3
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 1.0
10
8
6
T j =125 C -55 C
4
25 C
2
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
120
100
80 V G S =4.5V
60
V G S =10V
40
20
0
1
4
8
12 16
20
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
2.0
1.8 V G S =10V
I D =8 . 6 A
1.6
1.4
1.2 V G S =4.5V
ID=8A
1.0
0.8
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.2
1.1 V DS =V GS
ID=250uA
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Mar,05,2009
4 www.samhop.com.tw
4페이지 STU612D
P-Channel
15
12
9
6
V GS =-10V
V GS =-4.5V
V GS =-4V
V GS =-3.5V
3 V GS =-3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 1.0
10
8
6
4
T j=125 C
2
25 C
-55 C
0
0 0.9 1.8 2.7 3.6 4.5 5.4
-VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
240
200
160
V GS =-4.5V
120
80 V GS =-10V
40
1
1 3 6 9 12 15
-ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
2.0
V G S =-10V
1.8 ID=-7.3A
1.6
1.4
V G S =-4.5V
1.2 ID=-6.3A
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=-250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
7
1.15
ID=-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Mar,05,2009
www.samhop.com.tw
7페이지 | |||
구 성 | 총 11 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
STU612D | Dual Enhancement Mode Field Effect Transistor | SamHop |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |