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PDF BLP8G20S-80P Data sheet ( Hoja de datos )
| Número de pieza | BLP8G20S-80P | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLP8G20S-80P
Power LDMOS transistor
Rev. 2 — 13 October 2014
Product data sheet
1. Product profile
1.1 General description
80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to
2200 MHz.
Table 1. Typical performance
Typical RF performance per section at Tcase = 25 C in a common Doherty demo board.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1805 to 1880
300 28 14.2 17 47 30 [1]
1880 to 1920
300 28 14.2 16.8 46 30 [1]
2110 to 2170
300 28 14.2 16 43 30 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing = 5 MHz.
1.2 Features and benefits
Designed for broadband operation (1800 MHz to 2200 MHz)
Excellent ruggedness
High efficiency
Excellent thermal stability
Internally matched for ease of use
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base station and multi-carrier applications in the 1800 MHz to
2200 MHz frequency range
1 page  
NXP Semiconductors
BLP8G20S-80P
Power LDMOS transistor
7.4 Graphical data
7.4.1 CW
*S
G%
*S
DDD
Ș'
Ș'
3/ :
VDS = 28 V; IDq = 300 mA.
(1) f = 1880 MHz
(2) f = 1900 MHz
(3) f = 1920 MHz
Fig 3. Power gain and drain efficiency as function of output power; typical values
7.4.2 Pulsed CW
BLP8G20S-80P
Product data sheet
*S
G%
DDD
Ș' Ș'
*S
3/ :
VDS = 28 V; IDq = 300 mA.
(1) f = 1880 MHz
(2) f = 1900 MHz
(3) f = 1920 MHz
Fig 4. Power gain and drain efficiency as function of output power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 13 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 11
5 Page 
NXP Semiconductors
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.4.1
7.4.2
7.4.3
7.4.4
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information . . . . . . . . . . . . . . . . . . . 3
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
VBW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Handling information. . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLP8G20S-80P
Power LDMOS transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 13 October 2014
Document identifier: BLP8G20S-80P
11 Page | ||
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| PDF Descargar | [ Datasheet BLP8G20S-80P.PDF ] | |
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