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PDF MBSK110S Data sheet ( Hoja de datos )
| Número de pieza | MBSK110S | |
| Descripción | Schottky Bridge Rectifier | |
| Fabricantes | YANGJIE | |
| Logotipo |  |
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MBSK12S THRU MBSK110S
肖特基桥式整流器 Schottky Bridge Rectifier
■特征 Features
■外形尺寸和印记 Outline Dimensions and Mark
● Io 1.0A
● VRRM
20V~100V
● 肖特基芯片
Schottky chip
● 耐正向浪涌电流能力高
High surge forward current capability
● 低正向电压
Low VF
■用途 Applications
● 作一般电源单相桥式整流用
General purpose 1 phase Bridge
MBS
.083(2.12)
.043(1.10)
.157(4.00) .276(7.0)
.142(3.60) MAX
.008(0.20)
MAX
.014(0.35)
.006(0.15)
Mounting Pad Layout
0.094
(2.40)
.102(2.60)
.087(2.20)
.193(4.90)
.177(4.50)
.033(0.84)
.022(0.56)
.053(1.53)
.037(0.95)
.106(2.70)
.090(2.30)
.043(1.10)
.028(0.70)
.118(3.0)
MAX
.053(1.53)
.037(0.95)
0.072
(1.84)
Dimensions in inches and (millimeters)
0.236
(6.00)
0.047
(1.20)
rectifier applications
■极限值（绝对最大额定值）
Limiting Values（Absolute Maximum Rating）
参数名称
Item
符号 单位
Symbol Unit
条件
Conditions
反向重复峰值电压
Repetitive Peak Reverse
Voltage
VRRM
V
平均整流输出电流
Average Rectified Output
Current
60Hz正弦波，
安装在氧化铝基板上
IO
A
电阻负载，Ta=25℃
60Hz sine wave,
On alumina substrate
安装在玻璃-环氧基板上
R-load, Ta=25℃
On glass-epoxi substrate
正向（不重复）浪涌电流
Surge(Non-
IFSM
A
repetitive)Forward Current
60HZ正弦波，一个周期，Tj=25℃
60HZ sine wave, 1 cycle, Tj=25℃
正向浪涌电流的平方对电流
浪涌持续时间的积分值
I2t A2S
Current Squared Time
1ms≤t<8.3ms Tj=25℃，单个二极管
1ms≤t<8.3ms Tj=25℃，Rating of per diode
存储温度
Storage Temperature
Tstg ℃
结温
Junction Temperature
Tj ℃
■电特性 （Ta=25℃ 除非另有规定）
Electrical Characteristics（Ta=25℃ Unless otherwise specified）
参数名称
符号 单位
测试条件
Item
Symbol Unit
Test Condition
正向峰值电压
Peak Forward Voltage
VFM
V
IFM=0.5A, 脉冲测试，单个二极管的额定值IFM=0.5A,
Pulse measurement, Rating of per diode
MBSK
12S 14S 16S 18S 110S
20 40 60 80 100
1.0
0.8
40
6.6
-55 ~+150
-55 ~+150
最大值
Max
0.55 0.65 0.85
反向峰值电流
Peak Reverse Current
IRRM
mA
VRM=VRRM ,脉冲测试，单个二极管的额定值
VRM=VRRM , Pulse measurement, Rating of per diode
0.5
热阻
Thermal Resistance
RθJ-A
结和环境之间，安装在氧化铝基板上
Between junction and ambient, On alumina substrate
℃/W
结和环境之间，安装在玻璃-环氧基板上
Between junction and ambient, On glass-epoxi
substrate
76
134
RθJ-L
结和引线之间
Between junction and lead
20
Document Number 0005
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBSK110S.PDF ] | |
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