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PDF NCP1392DDR2G Data sheet ( Hoja de datos )

Número de pieza NCP1392DDR2G
Descripción High-Voltage Half-Bridge Driver
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No Preview Available ! NCP1392DDR2G Hoja de datos, Descripción, Manual

NCP1392B, NCP1392D
High-Voltage Half-Bridge
Driver with Inbuilt
Oscillator
The NCP1392B/D is a selfoscillating high voltage MOSFET
driver primarily tailored for the applications using half bridge
topology. Due to its proprietary highvoltage technology, the driver
accepts bulk voltages up to 600 V. Operating frequency of the driver
can be adjusted from 25 kHz to 480 kHz using a single resistor.
Adjustable Brownout protection assures correct bulk voltage
operating range. An internal 100 ms or 12.6 ms PFC delay timer
guarantee that the main downstream converter will be turned on in the
time the bulk voltage is fully stabilized. The device provides fixed
dead time which helps lowering the shootthrough current.
Features
Wide Operating Frequency Range from 25 kHz to 480 kHz
Minimum frequency adjust accuracy $3%
Fixed Dead Time 0.6 ms or 0.3 ms
Adjustable Brownout Protection for a Simple PFC Association
100 ms or 12.6 ms PFC Delay Timer
Nonlatched Enable Input
Internal 16 V VCC Clamp
Low Startup Current of 50 mA
1 A / 0.5 A Peak Current Sink / Source Drive Capability
Operation up to 600 V Bulk Voltage
Internal Temperature Shutdown
SOIC8 Package
These are PbFree Devices
Typical Applications
Flat Panel Display Power Converters
Low Cost Resonant SMPS
High Power AC/DC Adapters for Notebooks
Offline Battery Chargers
Lamp Ballasts
http://onsemi.com
8
1
SOIC8
CASE 751
MARKING
DIAGRAMS
8
1392x
ALYWW
G
1
1392x
A
L
Y
WW
G
= Specific Device Code
x = B or D
= Assembly Location
= Wafer Lot
= Year
= Work Week
= PbFree Package
PINOUT DIAGRAM
VCC
Rt
BO
GND
Vboot
Mupper
HB
Mlower
ORDERING INFORMATION
Device
Package
Shipping
NCP1392BDR2G
NCP1392DDR2G
SOIC8
(PbFree)
SOIC8
(PbFree)
2500 /
Tape & Reel
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
May, 2012 Rev. 3
1
Publication Order Number:
NCP1392/D

1 page




NCP1392DDR2G pdf
NCP1392B, NCP1392D
MAXIMUM RATINGS TABLE
Symbol
Rating
Value
Unit
Vbridge High Voltage Bridge Pin Pin 6
1 to +600
V
Vboot Floating Supply Voltage
Vbridge
0 to 20
V
VDRV_HI HighSide Output Voltage
Vbridge 0.3 to
Vboot + 0.3
V
VDRV_LO LowSide Output Voltage
dVbridge/dt Allowable Output Slew Rate
0.3 to VCC +0.3
$50
V
V/ns
ICC
V_Rt
Maximum Current that Can Flow into VCC Pin (Pin 1), (Note 1)
Rt Pin Voltage
20
0.3 to 5
mA
V
RqJA
RqJA
Maximum Voltage, All Pins (Except Pins 4 and 5)
Thermal Resistance JunctiontoAir, IC Soldered on 50 mm2 Cooper 35 mm
Thermal Resistance JunctiontoAir, IC Soldered on 200 mm2 Cooper 35 mm
Storage Temperature Range
0.3 to 10
178
147
60 to +150
V
°C/W
°C/W
°C
ESD Capability, Human Body Model (All Pins Except HV Pins 6, 7 and 8)
2.0 kV
ESD Capability, Human Body Model (HV Pins 6, 7 and 8)
1.5 kV
ESD Capability, Machine Model
200 V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device contains internal zener clamp connected between VCC and GND terminals. Current flowing into the VCC pin has to be limited
by an external resistor when device is supplied from supply which voltage is higher than VCCclamp (16 V typically). The ICC parameter is
specified for VBO = 0 V.
http://onsemi.com
5

5 Page





NCP1392DDR2G arduino
NCP1392B, NCP1392D
TYPICAL CHARACTERISTICS
580
560
540
520
500
480
460
440
420
400
40
20
0 20 40 60 80 100 120
TEMPERATURE (°C)
Figure 22. Rt_discharge
19.4
19.2
19.0
18.8
18.6
18.4
18.2
18.0
17.8
17.6
17.4
40
20
290
0 20 40 60 80
TEMPERATURE (°C)
100 120
Figure 24. IBO
240
190
140
90
400.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Irt (mA)
Figure 26. Irt and Appropriate Frequency
(B Version)
110
108
106
104
102
100
98
96
94
92
90
40
20
0 20 40 60 80 100 120
TEMPERATURE (°C)
Figure 23. ENhyste
17.0
16.8
16.6
16.4
16.2
16.0
15.8
40 20
0 20 40 60 80 100 120
TEMPERATURE (°C)
Figure 25. VCC_clamp
600
500
400
300
200
100
00.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Irt (mA)
Figure 27. Irt and Appropriate Frequency
(D Version)
http://onsemi.com
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