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PDF SiA400EDJ Data sheet ( Hoja de datos )
| Número de pieza | SiA400EDJ | |
| Descripción | N-Channel 30 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 30 V (D-S) MOSFET
SiA400EDJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.019 at VGS = 4.5 V
30
0.025 at VGS = 2.5 V
ID (A)a
12
12
Qg (Typ.)
11.6
PowerPAK SC-70-6L-Single
2.05 mm
2.05 mm
Ordering Information:
SiA400EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
• Typical ESD Performance 2500 V HBM
• 100 % Rg and UIS Tested
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Load Switch, OVP Switch
• Boost Converters
• DC/DC Converters
Marking Code
Part # code
AIX
XXX
Lot Traceability
and Date code
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
Avalanche Current
Single Pulse Avalanche
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
30
± 12
12a
12a
11b, c
8.8b, c
30
12a
2.9b, c
15
11.25
19.2
12.3
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
28
5.3
36
°C/W
6.5
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 67844
For technical questions, contact: [email protected]
www.vishay.com
S13-0787-Rev. B, 15-Apr-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by RDS(on)*
28
10 21
100 μs
1 ms
1
10 ms
100 ms
0.1 1 s, 10 s
DC
TA = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
14
7
0
0
SiA400EDJ
Vishay Siliconix
Package Limited
25 50 75 100 125
TC - Case Temperature (°C)
Current Derating**
150
25 2.0
20
1.5
15
1.0
10
0.5
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
** The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67844
For technical questions, contact: [email protected]
www.vishay.com
S13-0787-Rev. B, 15-Apr-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
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| PDF Descargar | [ Datasheet SiA400EDJ.PDF ] | |
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