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부품번호 | K9F4G08U0E 기능 |
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기능 | 4Gb E-die NAND Flash | ||
제조업체 | Samsung | ||
로고 | |||
전체 51 페이지수
SAMSUNG CONFIDENTIAL
Rev.1.2, Jun. 2013
K9F4G08U0E
K9K8G08U0E
K9K8G08U1E
K9WAG08U1E
4Gb E-die NAND Flash
Single-Level-Cell (1bit/cell)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
ⓒ 2013 Samsung Electronics Co., Ltd. All rights reserved.
-1-
K9F4G08U0E K9K8G08U1E
K9K8G08U0E K9WAG08U1E
datasheet
SAMSUNG CONFIDENTIAL
Rev. 1.2
FLASH MEMORY
5.9 Read ID ................................................................................................................................................................... 48
5.10 Reset ..................................................................................................................................................................... 48
5.11 Ready/Busy ........................................................................................................................................................... 49
5.12 Data Protection & Power Up Sequence ................................................................................................................ 50
-4-
4페이지 K9F4G08U0E K9K8G08U1E
K9K8G08U0E K9WAG08U1E
1.5 Pin Configuration (TSOP1)
datasheet
SAMSUNG CONFIDENTIAL
Rev. 1.2
FLASH MEMORY
N.C
N.C
N.C
N.C
N.C
R/B2
R/B1
RE
CE1
CE2
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
K9K8G08U1E-SCB0/SIB0
K9WAG08U1E-SCB0/SIB0
48-pin TSOP1
Standard Type
12mm x 20mm
48 N.C
47 N.C
46 N.C
45 N.C
44 I/O7
43 I/O6
42 I/O5
41 I/O4
40 N.C
39 N.C
38 N.C
37 Vcc
36 Vss
35 N.C
34 N.C
33 N.C
32 I/O3
31 I/O2
30 I/O1
29 I/O0
28 N.C
27 N.C
26 N.C
25 N.C
1.5.1 PACKAGE DIMENSIONS
48-PIN LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220BF
Unit :mm
20.000.20
#1 #48
#24
0~8
0.45~0.75
18.400.10
#25
1.050.03
1.20 MAX
0.02 MIN
( 0.50 )
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당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
K9F4G08U0A | (K9xxG08UxA) FLASH MEMORY | Samsung semiconductor |
K9F4G08U0B | FLASH MEMORY | Samsung |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |