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MOC3061M 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 MOC3061M은 전자 산업 및 응용 분야에서
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부품번호 MOC3061M 기능
기능 6-Pin DIP Zero-Cross Phototriac Driver Optocoupler
제조업체 Fairchild Semiconductor
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MOC3061M 데이터시트, 핀배열, 회로
September 2015
MOC3061M, MOC3062M, MOC3063M,
MOC3162M, MOC3163M
6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
Features
• Simplifies Logic Control of 115/240 VAC Power
• Zero Voltage Crossing to Minimize Conducted and
Radiated Line Noise
• 600 V Peak Blocking Voltage
• Superior Static dv/dt
– 600 V/μs (MOC306xM)
– 1000 V/μs (MOC316xM)
• Safety and Regulatory Approvals
– UL1577, 4,170 VACRMS for 1 Minute
– DIN EN/IEC60747-5-5
Applications
• Solenoid/Valve Controls
• Static Power Switches
• Temperature Controls
• AC Motor Starters
• Lighting Controls
• AC Motor Drives
• E.M. Contactors
• Solid State Relays
Description
The MOC306XM and MOC316XM devices consist of a
GaAs infrared emitting diode optically coupled to a
monolithic silicon detector performing the function of a
zero voltage crossing bilateral triac driver.
They are designed for use with a triac in the interface of
logic systems to equipment powered from 115/240 VAC
lines, such as solid-state relays, industrial controls,
motors, solenoids and consumer appliances, etc.
Schematic
Package Outlines
ANODE 1
6 MAIN TERM.
CATHODE 2
N/C 3
ZERO
CROSSING
CIRCUIT
5 NC*
4 MAIN TERM.
*DO NOT CONNECT
(TRIAC SUBSTRATE)
Figure 1. Schematic
©2005 Fairchild Semiconductor Corporation
MOC306XM, MOC316XM Rev. 1.5
Figure 2. Package Outlines
www.fairchildsemi.com




MOC3061M pdf, 반도체, 판매, 대치품
Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
Parameters
Test Conditions
EMITTER
VF Input Forward Voltage
IR Reverse Leakage Current
DETECTOR
IDRM1
Peak Blocking Current,
Either Direction
IF = 30 mA
VR = 6 V
VDRM = 600 V, IF = 0(1)
dv/dt
Critical Rate of Rise of
Off-State Voltage
IF = 0 (Figure 11)(2)
Device Min. Typ. Max. Unit
All
1.3 1.5
V
All 0.005 100 μA
MOC306XM
MOC316XM
10 500
nA
10 100
MOC306XM 600
MOC316XM 1000
1500
V/μs
Transfer Characteristics
Symbol
DC Characteristics
Test Conditions Device Min. Typ. Max. Unit
MOC3061M
15
LED Trigger Current
IFT (Rated IFT)
Main Terminal
Voltage = 3 V(3)
MOC3062M
MOC3162M
MOC3063M
MOC3163M
10
mA
5
VTM
Peak On-State Voltage, Either Direction
ITM = 100 mA peak,
IF = rated IFT
IH Holding Current, Either Direction
All
All
1.8 3.0
500
V
μA
Zero Crossing Characteristics
Symbol Characteristics
VINH
Inhibit Voltage (MT1-MT2
voltage above which
device will not trigger)
IDRM2
Leakage in Inhibited
State
Test Conditions
Device
IF = rated IFT
MOC3061M
MOC3062M
MOC3063M
MOC3162M
MOC3163M
IF = rated IFT, DRM = 600 V,
off-state
All
Min.
Typ.
12
12
Max.
20
15
2
Unit
V
mA
Isolation Characteristics
Symbol
Parameter
VISO Isolation Voltage(4)
RISO Isolation Resistance
CISO Isolation Capacitance
Test Conditions
f = 60 Hz, t = 1 Minute
VI-O = 500 VDC
V = 0 V, f = 1 MHz
Min.
4170
Typ.
1011
0.2
Max.
Unit
VACRMS
Ω
pF
Notes:
1. Test voltage must be applied within dv/dt rating.
2. This is static dv/dt. See Figure 11 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating
IF lies between max IFT (15 mA for MOC3061M, 10 mA for MOC3062M and MOC3162M, 5 mA for MOC3063M and
MOC3163M) and absolute maximum IF (60 mA).
4. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and
pins 4, 5 and 6 are common.
©2005 Fairchild Semiconductor Corporation
MOC306XM, MOC316XM Rev. 1.5
4
www.fairchildsemi.com

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MOC3061M 전자부품, 판매, 대치품
1. 100x scope probes are used, to allow high speeds and voltages.
2. The worst-case condition for static dv/dt is established by triggering the D.U.T. with a normal LED input current, then
removing the current. The variable vernier resistor combined with various capacitor combinations allows the dv/dt to
be gradually increased until the D.U.T. continues to trigger in response to the applied voltage pulse, even after the
LED current has been removed. The dv/dt is then decreased until the D.U.T. stops triggering. tRC is measured at this
point and recorded.
DIFFERENTIAL
PREAMP
X100 PROBE
1
2
X100 PROBE
VDRM/VRRM SELECT
6
DUT
4
20kΩ 2W
27 Ω
2W
1000Ω
10 WATT
WIREWOUND
0.33μF 1000V
0.047μF
1000V
MOUNT DUT ON
TEMPERATURE CONTROLLED
Cμ PLATE
dV
dt
VERNIER
100Ω
2W
82Ω
2W
470pF
0.001μF
0.005μF
0.01μF
0.047μF
1 MΩ
POWER
2W EACH
1.2 MΩ
2W
TEST
20V
f = 10 Hz
PW = 100 μs
50 Ω PULSE
GENERATOR
1N914
56Ω
2W
RFP4N100
1000Ω
1/4W
1N967A
18V
0.1μF
0.47μF
0-1000V
10mA
ALL COMPONENTS ARE NON-INDUCTIVE UNLESS SHOWN
Figure 11. Circuit for Static dV Measurement of Power Thyristors
dVt
Basic Applications
Typical circuit for use when hot line switching is
required. In this circuit the “hot” side of the line is
switched and the load connected to the cold or
neutral side. The load may be connected to either
the neutral or hot line.
Rin is calculated so that IF is equal to the rated IFT
of the part, 15mA for the MOC3061M, 10mA for
the MOC3062M, or 5mA for the MOC3063M.
The 39Ω resistor and 0.01μF capacitor are for
snubbing of the triac and is often, but not always,
necessary depending upon the particular triac and
load used.
VCC
Rin 1
6 360Ω
2 MOC3061M
MOC3062M
MOC3063M
3
5
4
FKPF12N60
39Ω
360Ω
0.01μF
HOT
240 VAC
LOAD NEUTRAL
Figure 12. Hot-Line Switching Application Circuit
Suggested method of firing two, back-to-back
SCR’s with a Fairchild triac driver. Diodes
can be 1N4001; resistors, R1 and R2, are
optional 330Ω.
Note:
This optoisolator should not be used to drive
a load directly. It is intended to be a trigger
device only.
R1 D1
VCC
1
6
Rin
2
MOC3061M
MOC3062M
5
MOC3063M
34
360Ω
115 VAC
SCR
SCR
R2 D2
LOAD
Figure 13. Inverse-Parallel SCR Driver Circuit
©2005 Fairchild Semiconductor Corporation
MOC306XM, MOC316XM Rev. 1.5
7
www.fairchildsemi.com

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