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ESD5Z2.5T1G 데이터시트 PDF




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ESD5Z2.5T1G 데이터시트, 핀배열, 회로
ESD5Z2.5T1G Series,
SZESD5Z2.5T1G Series
Transient Voltage
Suppressors
MicroPackaged Diodes for ESD Protection
The ESD5Z Series is designed to protect voltage sensitive
components from ESD and transient voltage events. Excellent
clamping capability, low leakage, and fast response time, make these
parts ideal for ESD protection on designs where board space is at a
premium. Because of its small size, it is suited for use in cellular
phones, portable devices, digital cameras, power supplies and many
other portable applications.
Specification Features:
Low Clamping Voltage
Small Body Outline Dimensions:
0.047x 0.032(1.20 mm x 0.80 mm)
Low Body Height: 0.028(0.7 mm)
Standoff Voltage: 2.5 V 12 V
Peak Power up to 240 Watts @ 8 x 20 ms Pulse
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
IEC6100042 Level 4 ESD Protection
IEC6100044 Level 4 EFT Protection
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree and are RoHS Compliant*
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
http://onsemi.com
SOD523
CASE 502
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
XX
1 G2
XX = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
ESD5ZxxxT1G
SOD523
PbFree
3,000 /
Tape & Reel
SZESD5ZxxxT1G
SOD523
PbFree
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics tables starting on
page 3 of this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
January, 2014 Rev. 12
1
Publication Order Number:
ESD5Z2.5T1/D




ESD5Z2.5T1G pdf, 반도체, 판매, 대치품
ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series
IEC 6100042 Spec.
Level
Test
Voltage
(kV)
First Peak
Current Current at
(A) 30 ns (A)
1 2 7.5 4
2 4 15 8
3 6 22.5 12
48
30 16
Current at
60 ns (A)
2
4
6
8
IEC6100042 Waveform
Ipeak
100%
90%
I @ 30 ns
I @ 60 ns
10%
tP = 0.7 ns to 1 ns
ESD Gun
TVS
Figure 3. IEC6100042 Spec
Oscilloscope
50 W
Cable
50 W
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC6100042 waveform. Since the
IEC6100042 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
100
90 tr
80
70
60
50
40
30
20
10
00
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
tP
20 40
60
t, TIME (ms)
Figure 5. 8 X 20 ms Pulse Waveform
80
http://onsemi.com
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