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PDF SiHD7N60ET1-GE3 Data sheet ( Hoja de datos )
| Número de pieza | SiHD7N60ET1-GE3 | |
| Descripción | E Series Power MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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SiHD7N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
40
5
9
Single
0.6
DPAK
(TO-252)
D
GS
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
FEATURES
• Low Figure-of-Merit (FOM) Ron x Qg
• Low Input Capacitance (Ciss)
• Reduced Switching and Conduction Losses
• Ultra Low Gate Charge (Qg)
• Avalanche Energy Rated (UIS)
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Server and Telecom Power Supplies
• Switch Mode Power Supplies (SMPS)
• Power Factor Correction Power Supplies (PFC)
• Lighting
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
• Industrial
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
- Renewable Energy
- Solar (PV Inverters)
DPAK (TO-252)
SiHD7N60E-GE3
SiHD7N60ET1-GE3
SiHD7N60ET5-GE3
SiHD7N60ET4-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Drain-Source Voltage
TC = - 25 °C, ID = 250 μA
VDS
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
EAS
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Drain-Source Voltage Slope
Reverse Diode dV/dtd
TJ = 125 °C
dV/dt
Soldering Recommendations (Peak Temperature)c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 13.8 mH, Rg = 25 , IAS = 2.5 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
600
575
± 20
30
7
5
18
0.63
43
78
- 55 to + 150
37
3
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S13-1419-Rev. C, 01-Jul-13
1
Document Number: 91510
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
+- VDD
Fig. 12 - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 13 - Switching Time Waveforms
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T.
IAS
0.01 Ω
+
- V DD
Fig. 14 - Unclamped Inductive Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 15 - Unclamped Inductive Waveforms
SiHD7N60E
Vishay Siliconix
10 V
QGS
VG
QG
QGD
Charge
Fig. 16 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 μF
0.3 μF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
S13-1419-Rev. C, 01-Jul-13
5
Document Number: 91510
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SiHD7N60ET1-GE3.PDF ] | |
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