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부품번호 | NSBC143ZDXV6T1G 기능 |
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기능 | Dual NPN Bias Resistor Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 8 페이지수
MUN5233DW1,
NSBC143ZDXV6,
NSBC143ZDP6
Dual NPN Bias Resistor
Transistors
R1 = 4.7 kW, R2 = 47 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous IC 100 mAdc
Input Forward Voltage
VIN(fwd)
30
Vdc
Input Reverse Voltage
VIN(rev)
5
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5233DW1T1G,
SMUN5233DW1T1G
SOT−363
3,000/Tape & Reel
NSBC143ZDXV6T1G
SOT−563
4,000/Tape & Reel
NSBC143ZDXV6T5G
SOT−563
8,000/Tape & Reel
NSBC143ZDP6T5G
SOT−963
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 1
1
http://onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
SOT−363
CASE 419B
6
7K M G
G
1
SOT−563
CASE 463A
7K M G
G
1
SOT−963
CASE 527AD
YMG
1G
7K/Y
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Publication Order Number:
DTC143ZD/D
MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6
TYPICAL CHARACTERISTICS
MUN5233DW1, NSBC143ZDXV6
1
IC/IB = 10
1000
150°C
VCE = 10 V
0.1
0.01 1
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
150°C
25°C
−55°C
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
100
10
100 1
25°C
−55°C
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
f = 10 kHz
IE = 0 A
TA = 25°C
100
150°C
10
1
−55°C
100
0.1 25°C
10 20 30 40
VR, REVERSE BIAS VOLTAGE (V)
Figure 4. Output Capacitance
0.01
0.001
50 0
VO = 5 V
1 23
Vin, INPUT VOLTAGE (V)
4
Figure 5. Output Current vs. Input Voltage
10
−55°C
1 150°C
25°C
0.1
0
VO = 0.2 V
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
50
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4
4페이지 MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE F
D
−X−
A
L
654
12 3
E
−Y−
HE
b 65 PL
e 0.08 (0.003) M X Y
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
MILLIMETERS
INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.50 0.55 0.60 0.020 0.021 0.023
b 0.17 0.22 0.27 0.007 0.009 0.011
C 0.08 0.12 0.18 0.003 0.005 0.007
D 1.50 1.60 1.70 0.059 0.062 0.066
E 1.10 1.20 1.30 0.043 0.047 0.051
e 0.5 BSC
0.02 BSC
L 0.10 0.20 0.30 0.004 0.008 0.012
HE 1.50 1.60 1.70 0.059 0.062 0.066
SOLDERING FOOTPRINT*
0.3
0.0118
1.35
0.0531
1.0
0.0394
0.45
0.0177
0.5 0.5
0.0197 0.0197
ǒ ǓSCALE 20:1
mm
inches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NSBC143ZDXV6T1G | Dual NPN Bias Resistor Transistors | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |