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부품번호 | FGH75T65UPD 기능 |
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기능 | 75A Field Stop Trench IGBT | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 10 페이지수
August 2012
FGH75T65UPD
650V, 75A Field Stop Trench IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: VCE(sat) = 1.65V(Typ.) @ IC = 75A
• High input impedance
• Tightened Parameter Distribution
• RoHS compliant
• Short Circuit Ruggedness > 5us @25oC
General Description
Using Novel Field Stop Trench IGBT Technology, Fairchild’s
new series of Field Stop Trench IGBTs offer the optimum perfor-
mance for Solar Inverter , UPS and Digital Power Generator
where low conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Digital Power Generator
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM(1)
PD
SCWT
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2012 Fairchild Semiconductor Corporation
FGH75T65UPD Rev. C0
1
C
G
E
Ratings
650
± 20
150
75
225
75
50
225
375
187
5
-55 to +175
-55 to +175
300
Units
V
V
A
A
A
A
A
A
W
W
us
oC
oC
oC
Typ.
-
-
-
Max.
0.40
0.86
40
Units
oC/W
oC/W
oC/W
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
225
VGE= 20V 15V
180
12V
135
Figure 2. Typical Output Characteristics
225
VGE= 20V
15V
180
12V
135
90
10V
45
8V TC = 25oC
0
0 2 4 6 8 10
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
225
200
175
150
125
100
75
50
25
0
0
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
1234
Collector-Emitter Voltage, VCE [V]
5
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.5
Common Emitter
VGE = 15V
3.0
150A
2.5
2.0
75A
1.5
IC = 40A
1.0
25 50 75 100 125 150 175
Collector-EmitterCase Temperature, TC [oC]
90
10V
45
8V
TC = 175oC
0
0 2 4 6 8 10
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
225
Common Emitter
VCE = 400V
180 TC = 25oC
TC = 175oC
135
90
45
0
0 3 6 9 12 15
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
20
16
12
75A
8
IC = 40A
4
Common Emitter
TC = -40oC
150A
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
FGH75T65UPD Rev. C0
4
www.fairchildsemi.com
4페이지 Typical Performance Characteristics
Figure 19. Current Derating
180
150
120
90
60
30
0
0 25 50 75 100 125 150 175 200
Case temperature, TC [oC]
Figure 21. Forward Characteristics
300
100
TC = 175oC
10
1
0
TC = 125oC
TC = 75oC
TC = 25oC
123
Forward Voltage, VF [V]
Figure 23. Stored Charge
0.7
TC = 25oC
0.6 TC = 175oC
0.5
200A/µs
0.4
di/dt = 100A/µs
0.3
0.2
0.1
0.0
0
200A/µs
di/dt = 100A/µs
20 40 60
Forwad Current, IF [A]
4
80
Figure 20. Load Current Vs. Frequence
180
TC = 100oC
150
120
90
60 Duty cycle : 50%
T
C
=
100oC
Power Dissipation = 187W
30
VCC = 400V
load Current : peak of square wave
0
1k 10k 100k
Switching Frequency, f [Hz]
1M
Figure 22. Reverse Recovery Current
11
10 TC = 25oC
TC = 175oC
8
di/dt = 200A/µs
6
100A/µs
4
di/dt = 200A/µs
2
100A/µs
0
0 10 20 30 40 50 60 70 80
IC [A]
Figure 24. Reverse Recovery Time
200
TC = 25oC
TC = 175oC
160
di/dt = 100A/µs
120 200A/µs
80 di/dt = 100A/µs
200A/µs
40
0 20 40 60 80
Forward Current, IF [A]
FGH75T65UPD Rev. C0
7
www.fairchildsemi.com
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FGH75T65UPD | 75A Field Stop Trench IGBT | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |