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부품번호 | FGH75N60UF 기능 |
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기능 | 75A Field Stop IGBT | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
FGH75N60UF
600V, 75A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Induction Heating, UPS, SMPS, PFC
April 2009
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new
series of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where low
conduction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
600
20
150
75
225
452
181
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.276
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2009 Fairchild Semiconductor Corporation
FGH75N60UF Rev. A1
1
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
150A
4
75A
IC = 40A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
8000
6000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cies
4000
2000
0
1
Coes
Cres
10
Collector-Emitter Voltage, VCE [V]
30
Figure 11. SOA Characteristics
500
100
10s
100s
10
1ms
10 ms
1 DC
Single Nonrepetitive
0.1 Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
75A 150A
4
IC = 40A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
200V
VCC = 100V
9
300V
6
3
0
0 50 100 150 200 250
Gate Charge, Qg [nC]
Figure 12. Load Current vs. Frequency
140
VCC = 400V
load Current : peak of square wave
120
100
80
60
40
Duty cycle : 50%
T = 100oC
C
Powe Dissipation = 181W
20
1 10 100
Frequency [kHz]
1000
FGH75N60UF Rev. A1
4
www.fairchildsemi.com
4페이지 Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
FGH75N60UF Rev. A1
Dimensions in Millimeters
7 www.fairchildsemi.com
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FGH75N60UF | 75A Field Stop IGBT | Fairchild Semiconductor |
FGH75N60UFTU | 75A Field Stop IGBT | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |