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PDF H30T90 Data sheet ( Hoja de datos )
| Número de pieza | H30T90 | |
| Descripción | IGBT | |
| Fabricantes | Infineon Technologies | |
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Hay una vista previa y un enlace de descarga de H30T90 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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Soft Switching Series
IHW30N90T
q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with anti-parallel diode
Features:
• 1.1V Forward voltage of antiparallel diode
• TrenchStop® and Fieldstop technology for 900 V applications offers
:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Application specific optimisation of inverse diode
• Pb-free lead plating; RoHS compliant
G
PG-TO-247-3
C
E
Applications:
• Microwave Oven
• Soft Switching Applications for ZCS
Type
IHW30N90T
VCE
900V
IC
30A
VCE(sat),Tj=25°C
1.5V
Tj,max
175°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE ≤ 900V, Tj ≤ 175°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Marking
H30T90
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
900
60
30
90
90
23
13
36
±20
±25
428
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.3 Nov 08
1 page  
Soft Switching Series
IHW30N90T
q
80A VGE=20V
70A 15V
60A 13V
11V
50A 9V
40A 7V
30A
20A
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
80A VGE=20V
70A 15V
60A 13V
11V
50A 9V
40A 7V
30A
20A
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
60A
50A
40A
30A
20A TJ=175°C
10A 25°C
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.0V
1.5V
1.0V
IC=60A
IC=30A
IC=15A
0.5V
0.0V
-50°C
0°C
50°C 100°C 150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.3 Nov 08
5 Page 
Soft Switching Series
IHW30N90T
q
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
tr r
tt
SF
Q
S
Q
F
10% I
t
rrm
di /dt
90% I r r
rrm
V
R
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Power Semiconductors
11
Rev. 2.3 Nov 08
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet H30T90.PDF ] | |
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