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PDF SiZ710DT Data sheet ( Hoja de datos )
| Número de pieza | SiZ710DT | |
| Descripción | N-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 20 V (D-S) MOSFETs
SiZ710DT
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0068 at VGS = 10 V
Channel-1 20
0.0090 at VGS = 4.5 V
Channel-2 20 0.0033 at VGS = 10 V
0.0043 at VGS = 4.5 V
ID (A)
16a
16a
35a
35a
Qg (Typ.)
6.9 nC
18.2 nC
PowerPAIR® 6 x 3.7
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• POL
• Synchronous Buck Converter
Pin 1
G1 3.73 mm
1 D1
2
D1
D1
3
G2
6 S2
5
S1/D2
(Pin 7)
S2
4
6 mm
Ordering Information:
SiZ710DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G1
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
20
16a
16a
16a, b, c
15b, c
70
16a
3.2b, c
20
± 20
35a
35a
30b, c
24b, c
100
35a
3.8b, c
30
20 45
27 48
17 31
3.9b, c
4.6b, c
2.5b, c
3b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
24 32 20 27
3.5 4.6 2 2.6
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2.
Document Number: 65733
www.vishay.com
S11-2379-Rev. B, 28-Nov-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
SiZ710DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.0200
0.0175
ID = 19 A
0.0150
TJ = 150 °C
TJ = 25 °C
10
0.0125
0.0100
0.0075
0.0050
TJ = 125 °C
TJ = 25 °C
0.0025
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.0
0.0000
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
1.8
40
1.6
30
1.4
ID = 250 μA
20
1.2
10
1.0
0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001 0.01 0.1 1 10 100 1000
Time (s)
Single Pulse Power
100
Limited by RDS(on)*
10
1
TA = 25 °C
Single Pulse
0.1
100 μs
1 ms
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65733
www.vishay.com
S11-2379-Rev. B, 28-Nov-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
SiZ710DT
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
1
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10-4
10-3
10-2
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10-1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65733.
Document Number: 65733
www.vishay.com
S11-2379-Rev. B, 28-Nov-11
11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet SiZ710DT.PDF ] | |
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