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PDF FIR20N120TDG Data sheet ( Hoja de datos )
| Número de pieza | FIR20N120TDG | |
| Descripción | IGBT | |
| Fabricantes | American First Semiconductor | |
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IGBT
Features
1200V,20A,Vce(on)(typ)=2.3V@Vge=15V
High speed switching
Higher system efficiency
Soft current turn-off waveforms
Square RBSOA using NPT technology
General Description
First semi NPT IGBTs offer lower losses and higher
energy efficiency for application such as IH (induction heating),
UPS,General inverter and other soft switching applications.
FIR20N120TDG
PIN Connection TO-3P/TO-247
G
C
E
Marking Diagram
YAWW
FIR20N120TD
Y = Year
A = Assembly Location
WW = Work Week
FIR20N120TD= Specific Device Code
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGES
IC
ICM
IF
IFM
tsc
PD
TJ
TSTG
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current ( TC=25 ℃ )
Continuous Collector Current ( TC=100℃ )
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current ( TC=100 ℃ )
Diode Maximum Forward Current (Note 1)
Short Circuit Withstand Time
Maximum Power Dissipation ( TC=25 ℃ )
Maximum Power Dissipation ( TC=100℃ )
Operating Junction Temperature Range
Storage Temperature Range
Thermal Characteristics
Symbol
Parameter
Rth j-c
Rth j-c
Rth j-a
Thermal Resistance, Junction to case for IGBT
Thermal Resistance, Junction to case for Diode
Thermal Resistance, Junction to Ambient
@ 2010 Copyright By American First Semiconductor
Value
1200
+ 30
40
20
80
15
80
10
192
76
-55 to +150
-55 to +150
Max.
0.45
0.85
40
Units
V
V
A
A
A
A
A
us
W
W
℃
℃
Units
℃/ W
℃/ W
℃/ W
Page 1/8
1 page  
Typical Performance Characteristics
FIR20N120TDG
Figure8:typical VCE VS. VGE,TJ=25℃
Figure9:typical energy loss VS. IC, TC=25℃,L=500uH,
VCE=600V,VGE=15V,Rg=28
Ω
Figure10: typical switching time VS. IC, TC=25℃,
L=500uH, VCE=600V,VGE=15V,Rg=28Ω
Figure11:typical energy loss VS. Rg,TC=25℃,
L=500uH,VCE=600V,VGE=15V,IC=20A
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Page 5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FIR20N120TDG.PDF ] | |
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