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OM55N10SA 데이터시트 PDF




Omnirel에서 제조한 전자 부품 OM55N10SA은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 OM55N10SA 기능
기능 POWER MOSFETS
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OM55N10SA 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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OM55N10SA 데이터시트, 핀배열, 회로
OM55N10SC OM60N10SC OM75N05SC OM75N06SC
OM55N10SA OM75N05SA OM75N06SA
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE
50V, 60V, And 100V Ultra Low RDS(on)
Power MOSFETs In TO-254 And TO-258
Isolated Packages
FEATURES
• Isolated Hermetic Metal Packages
• Ultra Low RDS(on)
• Low Conductive Loss/Low Gate Charge
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Ceramic Feedthroughs available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate change simpler drive circuitry.
MAXIMUM RATINGS (Per Device)
PART NO.
OM60N10SC
OM55N10SC
OM55N10SA
OM75N06SC
OM75N06SA
OM75N05SC
OM75N05SA
VDS (V)
100
100
100
60
60
50
50
RDS(on) ( )
.025
.030
.035
.016
.018
.016
.018
SCHEMATIC
Drain
ID (A)
60
55
55
75
75
75
75
Package
TO-258AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
PIN CONNECTION
TO-254AA
TO-258AA
3.1
Gate
Source
4 11 R1
Supersedes 2 07 R0
3.1 - 47
1
Pin 1:
Pin 2:
Pin 3:
23
Drain
Source
Gate
123
Pin 1: Drain
Pin 2: Source
Pin 3: Gate




OM55N10SA pdf, 반도체, 판매, 대치품
OM55N10SA (TC = 25°C unless otherwise specified)
Avalanche Characteristics
IAR Avalanche Current
Min.
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
IAR Avalanche Current
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
Breakdown Voltage
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
IGSS Gate-Body Leakage
Current (VDS = 0)
Electrical Characteristics - ON
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source On
Resistance
ID(on) On State Drain Current
Electrical Characteristics - Dynamic
gfs Forward Transconductance
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Electrical Characteristics - Switching On
Td(on) Turn-On Time
tr Rise Time
(di/dt)on Turn-On Current Slope
100
2
55
25
Qg Total Gate Charge
Electrical Characteristics - Switching Off
Tr(Voff) Off Voltage Rise Time
tf Fall Time
tcross Cross-Over Time
Electrical Characteristics - Source Drain Diode
ISD Source Drain Current
ISDM* Source Drain Current (pulsed)
VSD Forward On Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
Typ. Max. Units
55 A
600 mJ
100 mJ
37 A
V
250 µA
1000 µA
±100 nA
4
0.035
0.070
V
A
4000
1100
250
S
pF
pF
pF
90 nS
270 nS
270 A/µS
120 nC
200 nS
210 nS
410 nS
55
180
1.5
180
A
A
V
nS
1.8 µC
11 A
Test Conditions
(repetitive or
non-repetitive,TJ = 25°C)
(starting TJ = 25°C,
ID = IAR, VDD = 25 V)
(pulse width limited
by Tj max, d < 1%)
(repetitive or
non-repetitive, TJ = 100°C)
ID = 250 µA, VGS = 0
VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 125°C
VGS = ±20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 30 A
TC = 100°C
VDS > ID(on) x R ,DS(on)max VGS = 10 V
VDS > ID(on) x R ,DS(on)max ID= 30 A
VDS = 25 V
VGS = 0
f = 1 mHz
VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
VDD = 80 V, ID = 30 A, VGS = 10 V
VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
ISD = 55 A, VGS = 0
ISD = 55 A, di/dt = 100 A/µs
VR = 80 V
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
OM75N06SC (TC = 25°C unless otherwise specified)
Avalanche Characteristics
IAR Avalanche Current
Min.
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
IAR Avalanche Current
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
Breakdown Voltage
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
IGSS Gate-Body Leakage
Current (VDS = 0)
Electrical Characteristics - ON
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source On
Resistance
ID(on) On State Drain Current
Electrical Characteristics - Dynamic
gfs Forward Transconductance
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Electrical Characteristics - Switching On
Td(on) Turn-On Time
tr Rise Time
(di/dt)on Turn-On Current Slope
60
2
75
25
Qg Total Gate Charge
Electrical Characteristics - Switching Off
Tr(Voff) Off Voltage Rise Time
tf Fall Time
tcross Cross-Over Time
Electrical Characteristics - Source Drain Diode
ISD Source Drain Current
ISDM* Source Drain Current (pulsed)
VSD Forward On Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
Typ. Max. Units
70 A
900 mJ
200 mJ
40 A
V
250 µA
1000 µA
±100 nA
4
0.016
0.032
V
A
4100
1800
420
S
pF
pF
pF
190 nS
900 nS
150 A/µS
130 nC
360 nS
280 nS
600 nS
75
300
1.5
120
A
A
V
nS
0.45 µC
6.5 A
Test Conditions
(repetitive or
non-repetitive,TJ = 25°C)
(starting TJ = 25°C,
ID = IAR, VDD = 25 V)
(pulse width limited
by Tj max, d < 1%)
(repetitive or
non-repetitive, TJ = 100°C)
ID = 250 µA, VGS = 0
VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 125°C
VGS = ±20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
TC = 100°C
VDS > ID(on) x R ,DS(on)max VGS = 10 V
VDS > ID(on) x R ,DS(on)max ID= 40 A
VDS = 25 V
VGS = 0
f = 1 mHz
VDD = 25 V, ID = 40 A
RG = 50 , VGS = 10 V
VDD = 25 V, ID = 40 A
RG = 50 , VGS = 10 V
VDD = 25 V, ID = 40 A, VGS = 10 V
VDD = 40 V, ID = 75 A
RG = 50 , VGS = 10 V
ISD = 75 A, VGS = 0
ISD = 75 A, di/dt = 100 A/µs
VR = 25 V
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.

4페이지










OM55N10SA 전자부품, 판매, 대치품
OM55N10SA - OM75N06SC
OM75N06SC, OM75N06SA, OM75N05SC, OM75N05SA
gfs(S)
50
40
30
20
10
Transconductance
TJ = 40°C
TJ = 25°C
TJ = 125°C
VDS > ID(on) x RDS(on)max
Static Drain-Source On Resistance
RDS(on)
0.030
0.025
VGS = 10V
0.020
0.015
0
0 20 40 60 80 100 ID(A)
0.010
0 20 40 60 80 ID(A)
Gate Charge vs Gate-Source Voltage
VGS (V)
10
8
6
4 VDS = 80V
ID = 30A
2
0
0
20 40
60 80 100 Qg(nC)
Capacitance Variations
C(nF)
5
4
3 VDS = 0
f = 1MHz
2
Cies
1 Coes
0 Cres
0
20 40
60 80 100 VDS(V
Normalized Gate Threshold
Voltage vs Temperature
VGS(th)
(norm)
VDS = VGS
ID = 250µA
1.2
1.0
0.8
0.6
-50 0 50 100 TJ (°C)
Normalized On Resistance
vs Temperature
RDS(on)
(norm)
1.5
1.0
0.5
VDS = 10V
ID = 30A
0
-50 0 50 100 TJ (°C)
3.1 - 53
3.1

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