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부품번호 | PMV48XPA 기능 |
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기능 | P-channel Trench MOSFET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 15 페이지수
PMV48XPA
20 V, P-channel Trench MOSFET
10 March 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Logic-level compatible
• Trench MOSFET technology
• Very fast switching
• AEC-Q101 qualified
3. Applications
• High-side loadswitch
• High-speed line driver
• Relay driver
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tamb = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
[1] - - -3.5 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C
resistance
- 48 55 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMV48XPA
20 V, P-channel Trench MOSFET
- 102
ID
(A)
- 10
Limit RDSon = VDS/ID
-1
- 10- 1
017aaa125
(1)
(2)
(3)
(4)
(5)
(6)
- 10- 2
- 10- 1
-1
IDM = single pulse
(1) tp = 100 µs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 6 cm2
- 10 - 102
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
213 245 K/W
[2] -
117 135 K/W
- 25 30 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMV48XPA
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
4 / 15
4페이지 NXP Semiconductors
PMV48XPA
20 V, P-channel Trench MOSFET
- 14
ID
(A)
- 12
- 10
-8
VGS = - 4.5 V
-3V
017aaa128
- 2.25 V
- 10- 3
ID
(A)
- 10- 4
017aaa129
(1) (2) (3)
-6
-2V
- 10- 5
-4
- 1.8 V
-2
0
0 -1 -2 -3 -4 -5
VDS (V)
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
- 10- 6
0.0
- 0.5
Tj = 25 °C; VDS = -3 V
(1) minimum values
(2) typical values
(3) maximum values
- 1.0
- 1.5
VGS (V)
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
0.20
RDSon
(Ω)
0.16
(1) (2)
017aaa130
0.25
RDSon
(Ω)
0.20
017aaa131
0.12
0.15
0.08
0.04
(3)
(4)
(5)
0.10
0.05
(1)
(2)
0.00
0.0
- 4.0
Tj = 25 °C
(1) VGS = -1.8 V
(2) VGS = -2.0 V
(3) VGS = -2.25 V
(4) VGS = -3.0 V
(5) VGS = -4.5 V
- 8.0
- 12.0
ID (A)
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
0.00
0
-1 -2 -3 -4 -5
VGS (V)
ID = -2.4 A
(1) Tj = 125 °C
(2) Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMV48XPA
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
7 / 15
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
PMV48XP | MOSFET ( Transistor ) | NXP Semiconductors |
PMV48XPA | P-channel Trench MOSFET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |