|
|
PDF MGA-13316 Data sheet ( Hoja de datos )
| Número de pieza | MGA-13316 | |
| Descripción | High Linearity Low Noise Amplifier | |
| Fabricantes | Avago Technologies | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MGA-13316 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
MGA-13316
High Gain, High Linearity Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-13316 is a two stage, easy-to-
use GaAs MMIC Low Noise Amplifier (LNA). The LNA has
low noise with good input return loss and high linearity
achieved through the use of Avago Technologies’ propri-
etary 0.25 Pm GaAs Enhancement-mode pHEMT process.
Minimum matching needed for input, output and the
inter-stage between the two LNA.
It is designed for optimum use between 2.2 GHz to 4 GHz.
For optimum performance at lower frequency from
400 MHz to 1.5 GHz, MGA-13116 is recommended. For
optimum performance at frequency from 1.5 GHz to
2.5 GHz, the MGA-13216 is recommended. All these 3
products, MGA-13116, MGA-13216 and MGA-13316 share
the same package and pinout configuration.
Pin Configuration and Package Marking
4.0 x 4.0 x 0.85 mm3 16-lead QFN
AVAGO
13316
YYWW
XXXX
Top View
12
11
GND
10
9
Pin 2 Vbias
1 Pin 3 RFin Q1
Pin 10 RFout Q2
2 Pin 11 RFout Q2
3 Pin 13 RFin Q2
Pin 16 RFout Q1
4
All other pins
NC – Not Connected
Bottom View
Note:
Package marking provides orientation and identification
“13316” = Product Code
“YYWW” = Year and Work Week of Manufacture
“XXXX” = Lot Number
Features
x Low noise figure
x High gain
x High linearity performance
x Excellent isolation
x GaAs E-pHEMT Technology [1]
x Low cost small package size: 4.0 x 4.0 x 0.85 mm3
x Excellent uniformity in product specifications
x Meets MSL1, Lead-free and halogen free
Specifications
2.5 GHz; Q1: 5 V, 53 mA (typ) Q2: 5 V, 116 mA (typ)
x 0.76 dB Noise Figure
x 34.3 dB Gain
x 50.3 dB RFout Q1 to RFin Q2 Isolation
x 41.8 dBm Output IP3
x 23.5 dBm Output Power at 1dB gain compression
Applications
x Low noise amplifier for cellular infrastructure including
GSM, CDMA, TD-LTE, and W-CDMA.
x Other very low noise applications.
Simplified Schematic
Vdd1
C9b R4b C10
Vdd2
C5a
R2 C7
R3
C8
L3
C6 R1
C4
C3
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 90 V
ESD Human Body Model = 600 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
L1
RFIN C1
L4
16 15
1
2 Q1 bias
14 13
12
11
3 Q1
4
5
6
Q2
10
9
78
L2
C2 RFOUT
Notes: Enhancement mode technology employs positive gate bias,
thereby eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
1 page  
MGA-13316 Typical Performance in Demoboard for 2.5 GHz
TA = 25° C, Vdd1 = 5.0 V, Vdd2 = 5.0 V, Idd1 = 53 mA, Idd2 = 116 mA
1.2 40
1
0.8
0.6
0.4
-40° C
25° C
85° C
0.2
2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1
Frequency (GHz)
Figure 9. NF vs Frequency and Temperature
35
30
25
20
1.5 2 2.5 3
Frequency (GHz)
Figure 10. Gain vs Frequency and Temperature
-40° C
25° C
85° C
3.5 4
50
48
46
44
42
40
38
36
34
2.2 2.3 2.4 2.5 2.6 2.7 2.8
Frequency (GHz)
Figure 11. OIP3 vs Frequency and Temperature
2.9
-40° C
25° C
85° C
3 3.1
25
24.5
24
23.5
23
22.5
22
21.5
21
2.2
-40° C
25° C
85° C
2.3 2.4
2.5 2.6 2.7 2.8
Frequency (GHz)
2.9
Figure 12. OP1dB vs Frequency and Temperature
3 3.1
40
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
0
Rev Isol
IRL
ORL
Gain
123
Frequency (GHz)
4
5
Figure 13. Input Return Loss, Output Return Loss, Gain, & Reverse Isolation
vs Frequency
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 12 14
Frequency (GHz)
Figure 14. K-factor vs Frequency and Temperature
-40° C
25° C
85° C
16 18 20
5
5 Page 
Reel Dimensions (7 inch reel)
SEE DETAIL "X"
6.25mm EMBOSSED LETTERS
LETTERING THICKNESS: 1.6mm
SLOT HOLE "b"
SLOT HOLE "a"
Ø178.0±0.5
FRONT
BACK
P6S
SLOT HOLE(2x)
180° APART.
6
PS
RECYCLE LOGO
FRONT VIEW
R10.65
R5.2
65° 45°
SLOT HOLE "a": 3.0±0.5mm(1x)
SLOT HOLE "b": 2.5±0.5mm(1x)
12.4
+1.5*
-0.0
1.5 MIN.
+0.5
Ø13.0 -0.2
Ø20.2 MIN.
FRONT
BACK
DETAIL "X"
3.5
DETAIL "Y"
(Slot Hole)
EMBOSSED RIBS
RAISED: 0.25mm, WIDTH: 1.25mm
BACK VIEW
Ø178.0±0.5
Ø51.2±0.3
SEE DETAIL "Y"
18.0*
MAX.
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2011 Avago Technologies. All rights reserved.
AV02-3239EN - December 23, 2011
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet MGA-13316.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MGA-13316 | High Linearity Low Noise Amplifier | Avago Technologies |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |