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PDF MGA-16216 Data sheet ( Hoja de datos )
| Número de pieza | MGA-16216 | |
| Descripción | Dual LNA | |
| Fabricantes | Avago Technologies | |
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MGA-16216
Dual LNA for Balanced Application 1440 – 2350 MHz
Data Sheet
Description
Avago Technologies’ MGA-16216 is an ultra low-noise
high linearity amplifier pair with built-in active bias and
shutdown features for balanced applications in the 1950
MHz band. Shutdown functionality is achieved using
a single DC voltage input pin. High linearity is achieved
through the use of Avago Technologies’ proprietary GaAs
Enhancement-mode pHEMT process1. It is housed in a
miniature 4.0 x 4.0 x 0.85 mm3 16-pin Quad Flat No-lead
(QFN). The compact footprint coupled with ultra low noise
and high linearity makes MGA-16216 an ideal choice for
basestation transmitters and receivers.
For applications > 1950 MHz, it is recommended to use
MGA-16316 1950-4000 MHz. For applications < 1450 MHz,
it is recommended to use MGA-16116 450-1450 MHz. All 3
products share the same package and pin out configuration.
Component Image
4.0 x 4.0 x 0.85 mm3 16-Lead QFN
AVAGO
16216
YYWW
XXXX
Note:
Package marking provides orientation and
identification
“16216 “ = Device Code
“YYWW” = Date Code identifies year and
work week of manufacturing
“XXXX” = Last 4 digit of assembly lot
number
Pin Configuration
Pin Use
Pin Use
1 RFIN1 10 GND
2 GND
11 GND
Pin 1
Pin 12 3 GND
12 RFOUT1
Pin 2 Pin 17 Pin 11 4 RFIN2 13 Not used
Pin 3 Pin 10 5 Bias_out2 14 Bias_in1
Pin 4
Pin 9 6 Vsd2
15 Vsd1
7 Bias_in2 16 Bias_out1
8 Not used 17 GND
VIEW FROM THE TOP
9 RFOUT2 – –
Features
Ultra Low Noise Figure
Variable Bias and Shutdown functionality
High IIP3: +17 dBm typ.
GaAs E-pHEMT Technology [1]
Small package size: 4.0 x 4.0 x 0.85 mm3
RoHS and MSL1 compliant.
Typical Performances
1950 MHz @ 4.8 V, 52.5 mA (typ per amplifier)
Gain: 18.4 dB
NF: 0.32 dB [2]
IIP3: 17.1 dBm
P1dB: 19.5 dBm
Shutdown voltage Vsd range > 1.5 V
Total shutdown current (Vsd1, Vsd2 = 3 V): 4.8 mA
Applications
Basestation Transmitter and Receivers requiring
balanced configuration
Ultra low-noise RF amplifiers.
Notes:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Measured at RFin pin of packaged part, other losses deembedded.
3. Good RF practice requires all unused pins to be grounded.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
1 page  
Table 2. Below is the table showing the MGA-16216 Reflection Coefficient Parameters tuned for Maximum OIP3. Vdd = 4.8 V,
Idd = 35 mA per amplifier. Input gamma is tuned for Fmin. The reflection coefficients are for single amplifier.
Frequency (MHz)
Gamma Load Position
Magnitude
Angle
IIP3 (dBm) [1]
Gain (dB)
1440
0.514
100.8
13.70
22.36
1750
1950
0.514
0.771
115.2
145.9
15.14
20.92
20.82
16.48
2350
0.643
162.6
19.70
16.12
Table 3. Below is the table showing the MGA-16216 Reflection Coefficient Parameters tuned for Maximum OIP3. Vdd = 4.8 V,
Idd = 55 mA per amplifier. Input gamma is tuned for Fmin. The reflection coefficients are for single amplifier.
Frequency (MHz)
1440
1750
1950
2350
Gamma Load Position
Magnitude
0.643
0.385
0.771
0.514
Angle
104.5
80.0
145.9
143.9
IIP3 (dBm) [1]
18.23
19.16
23.25
21.07
Gain (dB)
22.33
21.01
16.60
17.94
Table 4. Below is the table showing the MGA-16216 Reflection Coefficient Parameters tuned for Maximum OIP3. Vdd = 4.8 V,
Idd = 75 mA per amplifier. Input gamma is tuned for Fmin. The reflection coefficients are for single amplifier.
Gamma Load Position
Frequency (MHz)
Magnitude
Angle
1440
0.257
89.9
1750
0.514
129.6
1950
0.128
119.6
2350
0.257
149.9
Notes:
1. IIP3 test condition: FRF1-FRF2 = 1 MHz with input power of -20 dBm per tone.
2. Idd can be obtained by varying the Vg1/Vg2. Refer to figure 7.
IIP3 (dBm) [1]
18.09
20.21
20.48
21.39
Gain (dB)
22.04
20.33
18.31
16.88
Figure 7. RFinput and RFoutput Reference Plane
Note:
1. Maximum OIP3 is measured on coplanar waveguide made on 0.010 inch thick ROGER 4350.
5
5 Page 
BALANCED MODE APPLICATION
Electrical Specifications
TA = 25° C, Vdd1 = Vdd2 = 4.8 V, Vsd1 = Vsd2 = 0 V at Rbias = 1 Kohm, RF performance at 1950 MHz, CW operation unless
otherwise stated.
Symbol
Vdd
Idd
Gain
NF
OP1dB
IIP3
S11
S22
S12
Parameter and Test Condition
Supply Voltage per amplifier
Supply Current per amplifier
Gain
Noise Figure
Output Power at 1dB Gain Compression
Input Third Order Intercept Point
Input Return Loss, 50 source
Output Return Loss, 50 load
Reverse Isolation
Units
V
mA
dB
dB
dBm
dBm
dB
dB
dB
Typ.
4.8
50
18.6
0.489
21.6
20.2
-28.8
-23.2
-30.3
Balanced Amplifier Demo Board Layout
MGA-16X16_Demoboard
(2-Port)
Rev 1
X1
RFIN
R2
C20 C6
C2
C5 C4
R1
C1
L1
C3
C16
L2
C12
C15 C14
R6
C13
RO4350
DK 3.48
R9 R10
H 10mil
W 0.58mm
G 0.45mm
C23 C24
C25
C8
R3 R4
C7 L3 C10 C11
RFOUT
R5
C9
C19
C21
L4
L7
C18
C17
X2
R7
C22
R8 C26
APRIL 2011
Figure 18. Balanced Amplifier Demo Board Layout Diagram
Notes:
1. Recommended PCB material is 10 mils Rogers RO4350.
2. Suggested component values may vary according to layout and PCB material.
3. Board loss at 1950 MHz is 0.18 dB.
11
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