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PDF MGA-632P8 Data sheet ( Hoja de datos )
| Número de pieza | MGA-632P8 | |
| Descripción | High Linearity Active Bias Low Noise Amplifier | |
| Fabricantes | AVAGO | |
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MGA-632P8
Low Noise, High Linearity Active Bias Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-632P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA) with active
bias. The LNA has low noise with excellent input return
loss and high linearity achieved through the use of Avago
Technologies’ proprietary 0.5um GaAs Enhancement-
mode pHEMT process. The LNA has an extra feature that
allows a designer to adjust supply current and gain ex-
ternally. Due to the high isolation between the input and
output, gain can be adjusted independently through
a resistor in series with a blocking capacitor from the
output pin to FB1 pin, without affecting the noise figure.
It is housed in a miniature 2.0 x 2.0 x 0.75mm3 8-pin Thin
Small Leadless Package (TSLP) package. The compact
footprint and low profile coupled with low noise, high
gain, excellent input return loss and high linearity make
the MGA-632P8 an ideal choice as an LNA for cellular in-
frastructure for GSM, CDMA, W-CDMA and TD-SCDMA ap-
plications.
It is designed for optimum use between 1.4GHz to
3GHz. For optimum performance at lower frequency
from 400MHz to 1.5GHz, the MGA-631P8 is recommend-
ed. Both MGA-631P8 and MGA-632P8 share the same
package and pinout.
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm3 8-lead TSLP
Features
• Low noise figure
• Good input return loss
• High linearity performance
• High Isolation
• Externally adjustable supply current, 40-80mA
• Externally adjustable gain, 15-20dB
• GaAs E-pHEMT Technology[1]
• Low cost small package size: 2.0x2.0x0.75 mm3
• Excellent uniformity in product specifications
Specifications
1.95GHz; 4V, 60mA (typ)
• 17.6 dB Gain
• 0.62 dB Noise Figure
• -22.7 dB S11
• -40.5 dB S12
• 34.8 dBm Output IP3
• 19.2 dBm Output Power at 1dB gain compression
Applications
• Low noise amplifier for cellular infrastructure for GSM,
CDMA, W-CDMA and TD-SCDMA.
• Other ultra low noise applications.
Note:
[1] Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
Top View
Note:
Package marking provides
orientation and identification
“G2” is Device Code
“X” is month code
Bottom View
Note:
Pin 1 : not used Pin 5 : FB1
Pin 2 : RFin
Pin 6 : not used
Pin 3 : RF ground Pin 7 : RFout
Pin 4 : Vbias
Pin 8 : Gnd
Attention: Observe precautions for handling
electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and
Control.
1 page  
MGA-632P8 Typical Performance[5]
TA = +25 °C, Vd = 4V, Id = 60mA, R1=300ohm unless stated otherwise.
40
35
30
25
20
-40°C
15
-30°C
25°C
85°C
10
1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10
Frequency (GHz)
Figure 13. OIP3 vs Frequency and Temperature
20
18
16
14
12
10
8
6
4
2
0
10 20 30 40 50 60 70
Id (mA)
Figure 14. Gain vs Id and Temperature
-40°C
25°C
85°C
80 90
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10 20 30 40 50 60 70
Id (mA)
Figure 15. NF Vs Id and Temperature
-40°C
25°C
85°C
80 90
45
40
35
30
25
20
15
10
-40°C
5
-30°C
25°C
85°C
0
10 20 30 40 50 60 70 80 90
Id (mA)
Figure 16. OIP3 vs Id and Temperature
25
20
15
10
5
R1=56ohms
R1=300ohms
R1=10Kohms
0
1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10
Frequency (GHz)
Figure 17. Gain Vs Frequency and R1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
R1=56ohms
0.1 R1=300ohms
R1=10Kohms
0
1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10
Frequency (GHz)
Figure 18. NF Vs Frequency and R1
40 0
35 -5
30 -10
-15
25
-20
20
-25
R1=56ohms
15
R1=300ohms
R1=10Kohms
-30
R1=56ohms
R1=300ohms
R1=10Kohms
0
-5
-10
-15
-20
R1=56ohms
R1=300ohms
R1=10Kohms
10
1.70 1.75 1.80 1.85 1.90 1.95 2.00
Frequency (GHz)
Figure 19. OIP3 Vs Frequency and R1
2.05 2.10
-35
1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10
Frequency (GHz)
Figure 20. Input Return Loss Vs Frequency and
R1
-25
1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10
Frequency (GHz)
Figure 21. Output Return Loss Vs Frequency
and R1
Notes:
[5] Measurements obtained using demo board described in Figure 28 and Table 1, List 1.
5 Page 
MGA-632P8 Scattering Parameter and Noise Parameter Test Setup
Figure 34. Test Setup for S & Noise Parameters data, C3=1.2pF (Rohm MCH155A1R2CK)
Typical Noise Parameter, Vd=4V, Id=60mA, applicable to any R1 due to high reverse isolation
Freq
(GHz)
FMIN GAMMA
(dB) Mag
OPT
Ang
Rn/50
0.9 0.41 0.31 78 0.10
1.9 0.55 0.27 92 0.06
2.0 0.54 0.27 93 0.07
2.4 0.66 0.22 98 0.07
3.0 0.77 0.28 101 0.08
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated.
2. S and noise parameters are measured on PCB. The PCB material is 10 mils Roger RO4350. Figure 34 shows the input and output reference plane.
11
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| PDF Descargar | [ Datasheet MGA-632P8.PDF ] | |
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