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PDF MGA-633P8 Data sheet ( Hoja de datos )
| Número de pieza | MGA-633P8 | |
| Descripción | High Linearity Low Noise Amplifier | |
| Fabricantes | AVAGO | |
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MGA-633P8
Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-633P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has
low noise and high linearity achieved through the use of
Avago Technologies’ proprietary 0.25um GaAs Enhance-
ment-mode pHEMT process. It is housed in a miniature
2.0 x 2.0 x 0.75mm3 8-pin Quad-Flat-Non-Lead (QFN)
package. It is designed for optimum use from 450MHz up
to 2GHz. The compact footprint and low profile coupled
with low noise, high gain and high linearity make the
MGA-633P8 an ideal choice as a low noise amplifier for
cellular infrastructure for GSM and CDMA. For optimum
performance at higher frequency from 1.5GHz to 2.3GHz,
the MGA-634P8 is recommended, and from 2.3GHz to
4GHz, the MGA-635P8 is recommended. Both MGA-634P8
and MGA-635P8 share the same package and pinout as
MGA-633P8
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm3 8-lead QFN
[1] [8]
33X[2] [7]
[3] [6]
[4] [5]
[8]
[7]
[6]
[5]
[1]
[2]
[3]
[4]
Top View
Bottom View
Pin1 – Vbias
Pin2 – RFinput
Pin3 – Not Used
Pin4 – Not Used
Pin5 – Not Used
Pin6 – Not Used
Pin7 – RFoutput / Vdd
Pin8 – Not Used
Note:
Package marking provides orientation and identification
“33” = Device Code
“X” = Month Code
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 90 V (Class A)
ESD Human Body Model = 600 V (Class 1B)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Features
x Ultra Low noise Figure
x High linearity performance
x GaAs E-pHEMT Technology[1]
x Low cost small package size: 2.0x2.0x0.75 mm3
x Excellent uniformity in product specifications
x Tape-and-Reel packaging option available
Specifications
900MHz; 5V, 54mA
x 18 dB Gain
x 0.37 dB Noise Figure
x 15dB Input Return Loss
x 37 dBm Output IP3
x 22 dBm Output Power at 1dB gain compression
Applications
x Low noise amplifier for cellular infrastructure for GSM
and CDMA.
x Other ultra low noise application.
Simplified Schematic
Vdd
Rbias
C5 R1
R2 C6
C3 L1
C4
L2
RFin C1
[1] bias [8]
[2] [7]
C2
RFout
[3] [6]
[4] [5]
Note:
x The schematic is shown with the assumption that similar PCB is used
for all MGA-633P8, MGA-634P8 and MGA-635P8.
x Detail of the components needed for this product is shown in Table
1.
x Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
1 page  
MGA-633P8 Typical Performance
RF performance at TA = 25°C, Vdd = 5V, Id = 54mA, measured using 50ohm input and output board, unless otherwise stated.
OIP3 test condition: FRF1 = 900 MHz, FRF2 = 901 MHz with input power of -10dBm per tone.
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.1 0.1
0
40
50 55
Idd (mA)
Figure 7. Fmin vs Idd at 5V at 700MHz
70
80
0
40
50 55
Idd (mA)
Figure 8. Fmin vs Idd at 5V at 900MHz
70
80
20
19
18
17
16
15
40
55 70
Idd(mA)
80
Figure 10. Gain vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 700MHz
20
19
18
17
16
15
40
55 70
Idd(mA)
80
Figure 11. Gain vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 900MHz
45
44
43
42
41
40
39
38
37
36
35
40
55 70
Idd(mA)
80
Figure 12. OIP3 vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 700MHz
45
44
43
42
41
40
39
38
37
36
35
40
55 70
Idd(mA)
80
Figure 13. OIP3 vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 900MHz
5
5 Page 
Typical Noise Parameters, Vdd = 5V, Idd = 54mA
Freq Fmin *opt *opt
GHz dB
Mag. Ang. Rn/50
0.5
0.46
0.169
-37
0.051
0.7 0.38 0.15 -17 0.0586
0.75
0.36
0.144
-15
0.0532
0.8
0.35
0.136
-13
0.0478
0.9
0.33
0.129
-7
0.0446
1.7
0.46
0.048
80.5
0.0644
1.9
0.51
0.028
98.7
0.0498
Notes:
1. The Fmin values are based on noise figure measurements at 100
different impedances using Focus source pull test system. From
these measurements a true Fmin is calculated.
2. Scatteringandnoiseparametersaremeasuredoncoplanarwaveguide
made on 0.010 inch thick ROGER 4350. The input reference plane is
at the end of the RFinput pin and the output reference plane is at the
end of the RFoutput pin as shown in Figure 30.
3. S2P file with scattering and noise parameters for biasing 3V 54mA,
3.5V 54mA, 4V 54mA, 4.5V 54mA, 5V 40mA, 5V 54mA and 5V 70mA
are available upon request.
Part Number Ordering Information
Part Number
No. of Devices
MGA-633P8-BLKG
100
MGA-633P8-TR1G
3000
Container
Antistatic Bag
7 inch Reel
SLP2X2 Package
PIN 1 DOT
BY MARKING
2.00±0.050
0.203 Ref.
2.00±0.050
33X
0.35±0.050
Top View
0.60±0.050
Exp. DAP
0.000–0.05
0.75±0.05
Side View
PIN #1 IDENTIFICATION
R0.100
0.25±0.050
11
1.20±0.050
Exp. DAP
0.50 Bsc
1.50
Ref.
Bottom View
Notes:
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash and metal burr.
11 Page | ||
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