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PDF MGA-634P8 Data sheet ( Hoja de datos )
| Número de pieza | MGA-634P8 | |
| Descripción | High Linearity Low Noise Amplifier | |
| Fabricantes | AVAGO | |
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MGA-634P8
Ultra Low Noise, High Linearity Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-634P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA
has low noise and high linearity achieved through the
use of Avago Technologies’ proprietary 0.25um GaAs
Enhancement-mode pHEMT process. It is housed in a
miniature 2.0 x 2.0 x 0.75mm3 8-pin Quad-Flat-Non-Lead
(QFN) package. It is designed for optimum use from 1.5
GHz up to 2.3 GHz. The compact footprint and low profile
coupled with low noise, high gain and high linearity make
the MGA-634P8 an ideal choice as a low noise amplifier for
cellular infrastructure for GSM and CDMA. For optimum
performance at lower frequency from 450MHz up to
1.5GHz, MGA-633P8 is recommended. For optimum per-
formance at higher frequency from 2.3GHz up to 4GHz,
MGA-635P8 is recommended. All these 3 products, MGA-
633P8, MGA-634P8 and MGA-635P8 share the same
package and pinout configuration.
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm3 8-lead QFN
[1] [8]
[2] [7]
[3] 34X [6]
[4] [5]
[8]
[7]
[6]
[5]
[1]
[2]
[3]
[4]
Top View
Pin 1 – Vbias
Pin 2 – RFinput
Pin 3 – Not Used
Pin 4 – Not Used
Bottom View
Pin 5 – Not Used
Pin 6 – Not Used
Pin 7 – RFoutput/Vdd
Pin 8 – Not Used
Centre tab - Ground
Features
Ultra Low noise Figure
High linearity performance
GaAs E-pHEMT Technology [1]
Low cost small package size: 2.0x2.0x0.75 mm3
Excellent uniformity in product specifications
Tape-and-Reel packaging option available
Specifications
1.9 GHz; 5V, 48mA
17.4 dB Gain
0.44 dB Noise Figure
15.5 dB Input Return Loss
36 dBm Output IP3
21 dBm Output Power at 1dB gain compression
Applications
Low noise amplifier for cellular infrastructure for GSM
TDS-CDMA, and CDMA.
Other ultra low noise application.
Simplified Schematic
Vdd
Rbias
C5 R1
R2 C6
C3
L1
C4
L2
Note:
Package marking provides orientation and identification
“34” = Device Code, where X is the month code.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 70 V (Class A)
ESD Human Body Model = 500 V (Class 1B)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
RFin C1
[1] bias [8]
[2] [7]
[3] [6]
[4] [5]
C2
RFout
Notes:
The schematic is shown with the assumption that similar PCB is used
for all MGA-633P8, MGA-634P8 and MGA-635P8.
Detail of the components needed for this product is shown in Table 1.
Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
Good RF practice requires all unused pins to be earthed.
1 page  
MGA-634P8 Typical Performance
RF performance at TA = 25°C, Vdd = 5V, Id = 50mA, measured using 50ohm input and output board, unless otherwise
stated. OIP3 test condition: FRF1 = 1.9 GHz, FRF2 = 1.901 GHz with input power of -10dBm per tone.
0.44
0.42
0.4
0.38
0.36
0.34
0.32
0.3
40
50 55 70
Idd (mA)
80
0.5
0.48
0.46
0.44
0.42
0.4
0.38
0.36
0.34
0.32
0.3
40
50 55 70
Idd (mA)
80
Figure 7. Fmin vs Idd at 5V at 1.9GHz.
Figure 8. Fmin vs Idd at 5V at 2GHz.
20
18
16
14
12
10
8
6
4
2
0
40
50 55 70
Idd(mA)
80
Figure 9. Gain vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 1.9GHz.
20
18
16
14
12
10
8
6
4
2
0
40
50 55 70
Idd(mA)
80
Figure 10. Gain vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 2GHz.
45
40
35
30
25
20
15
10
5
0
40
50 55
Idd(mA)
70
80
Figure 11. OIP3 vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 1.9GHz.
45
40
35
30
25
20
15
10
5
0
40
50 55 70
Idd(mA)
80
Figure 12. OIP3 vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 2GHz.
5
5 Page 
Typical Noise Parameters, Vdd = 5V, Idd = 50mA
Freq GHz Fmin dB
1.5 0.36
opt Mag. opt Ang. Rn/50
0.138
68.4
0.0484
1.9
0.42
0.191
113.6
0.0442
2
0.47
0.177
120.4
0.0526
2.2
0.57
0.173
131.1
0.0444
2.5
0.67
0.188
151.5
0.0476
Notes:
1. The Fmin values are based on noise figure measurements at 100
different impedances using Focus source pull test system. From
these measurements a true Fmin is calculated.
2. Scatteringandnoiseparametersaremeasuredoncoplanarwaveguide
made on 0.010 inch thick ROGER 4350. The input reference plane is
at the end of the RFinput pin and the output reference plane is at the
end of the RFoutput pin as shown in figure 32.
3. S2P file with scattering and noise parameters for biasing 5V 40mA, 5V
50mA, 5V 70mA and 5V 80mA are available upon request.
Part Number Ordering Information
Part Number
No. of Devices
MGA-634P8-BLKG
100
MGA-634P8-TR1G
3000
Container
Antistatic Bag
7 inch Reel
SLP2X2 Package
PIN 1 DOT
BY MARKING
2.00±0.050
0.203 Ref.
2.00±0.050
34X
0.35±0.050
Top View
0.60±0.050
Exp. DAP
0.000–0.05
0.75±0.05
Side View
PIN #1 IDENTIFICATION
R0.100
0.25±0.050
Bottom View
1.20±0.050
Exp. DAP
1.50
Ref.
0.50 Bsc
Notes:
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash and metal burr.
11
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