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PDF MGA-636P8 Data sheet ( Hoja de datos )
| Número de pieza | MGA-636P8 | |
| Descripción | High Linearity Low Noise Amplifier | |
| Fabricantes | AVAGO | |
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MGA-636P8
High Linearity Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-636P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA). This LNA
has low noise and high linearity achieved through the
use of Avago Technologies’ proprietary 0.25 m GaAs
Enhancement-mode pHEMT process. It is housed in the
miniature 2.0 x 2.0 x 0.75 mm3 8-pin Dual-Flat-Non-Lead
(DFN) package. The device is designed for optimum use
from 450 MHz up to 1.5 GHz. The compact footprint
and low profile coupled with low noise, high gain and
high linearity make this an ideal choice as a low noise
amplifier for cellular infrastructure applications such as
LTE, GSM, CDMA, W-CDMA, CDMA2000 & TD-SCDMA. For
optimum performance at lower frequency from 1.5 GHz
up to 2.5 GHz, MGA-637P8 is recommended. For optimum
performance at higher frequency from 2.5 GHz up to 4
GHz, MGA-638P8 is recommended. All these 3 products,
MGA-636P8, MGA-637P8 and MGA-638P8 share the same
package and pinout configuration.
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm3 8-lead DFN
[1] [8]
[2] 36X [7]
[3] [6]
[4] [5]
[8] [1]
[7] [2]
[6] GND [3]
[5] [4]
TOP VIEW
Pin 1 – Not Used
Pin 2 – RFinput
Pin 3 – Vbias2
Pin 4 – Not Used
Center paddle – GND
BOTTOM VIEW
Pin 5 – Vbias1
Pin 6 – PwrDwn
Pin 7 – RFoutput
Pin 8 – Not Used
Note:
Package marking provides orientation and identification
“36” = Product Code
“X” = Month Code
It is recommended to ground Pin1, 4 and 8 which are Not Used.
Features
High linearity performance.
Low Noise Figure.
GaAs E-pHEMT Technology[1].
Low cost small package size.
Integrated with active bias and option to access FET
gate.
Integrated power down control pin.
Specifications
700 MHz; 4.8 V, 108 mA
18.8 dB Gain
0.44 dB Noise Figure
11 dB Input Return Loss
23.7 dBm Input IP3
23.8 dBm Output Power at 1 dB gain compression
Applications
Cellular infrastructure applications such as LTE, GSM,
CDMA, W-CDMA, CDMA2000 & TD-SCDMA.
Other low noise applications.
Note:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with con-
ventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 70 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
1 page  
Typical Performance
RF performance at TA = 25° C, Vdd = 4.8 V, Idd = 100 mA, measured using 50 ohm input and output board unless stated
otherwise. IIP3 test condition: FRF1-FRF2 = 1 MHz with input power of -10 dBm per tone.
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.1 0.1
0
70
80 90
Idd (mA)
Figure 7. Fmin vs Idd at 4.8 V at 700 MHz
100
110
0
70
80 90
Idd (mA)
Figure 8. Fmin vs Idd at 4.8 V at 900 MHz
100
110
22
20
18
16
14
12
10
8
6
4
2
0
70
80 90 100
Idd (mA)
110
Figure 9. Gain vs Idd at 4.8 V Tuned for Optimum IIP3 and Fmin at 700 MHz
22
20
18
16
14
12
10
8
6
4
2
0
70
80 90 100
Idd (mA)
110
Figure 10. Gain vs Idd at 4.8 V Tuned for Optimum IIP3 and Fmin at 900 MHz
30
29
28
27
26
25
24
23
22
21
20
70
80 90 100
Idd (mA)
110
Figure 11. IIP3 vs Idd at 4.8 V Tuned for Optimum IIP3 and Fmin at 700 MHz
30
29
28
27
26
25
24
23
22
21
20
70
80 90 100
Idd (mA)
110
Figure 12. IIP3 vs Idd at 4.8 V Tuned for Optimum IIP3 and Fmin at 900 MHz
5
5 Page 
Typical Noise Parameters, Vdd = 4.8 V, Idd = 108 mA
Freq Fmin opt opt
GHz dB
Mag. Ang. Rn/50
0.5
0.472
0.078
-31.8
0.038
0.7
0.432
0.080
11.5
0.037
0.8
0.379
0.081
33.2
0.037
0.9
0.386
0.082
54.8
0.038
1.7
0.5
0.092
228
0.043
1.9
0.582
0.094
271
0.043
Notes:
1. The Fmin values are based on noise figure measurements at 100
different impedances using Focus source pull test system. From
these measurements a true Fmin is calculated.
2. Scatteringandnoiseparametersaremeasuredoncoplanarwaveguide
made on 0.010 inch thick ROGER 4350. The input reference plane is
at the end of the RFinput pin and the output reference plane is at the
end of the RFoutput pin as shown in Figure 25.
Part Number Ordering Information
Part Number
No. of Devices
MGA-636P8-BLKG
100
MGA-636P8-TR1G
3000
Container
Antistatic Bag
7 inch Reel
DFN2X2 Package Dimensions
PIN 1 DOT
BY MARKING
2.00±0.10
0.20 Ref.
2.00±0.10
36X
0.35±0.05
TOP VIEW
0.60±0.05
Exp. DAP
0.0–0.05
0.75±0.10
SIDE VIEW
PIN #1 IDENTIFICATION
R0.10
0.25±0.05
BOTTOM VIEW
1.20±0.05
Exp. DAP
0.50 Bsc
1.50
Ref.
Notes:
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold ash and metal burr.
11
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