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PDF MMG3015NT1 Data sheet ( Hoja de datos )
| Número de pieza | MMG3015NT1 | |
| Descripción | Heterojunction Bipolar Transistor | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3015N is a General Purpose Amplifier that is internally Input
and output matched. It is designed for a broad range of Class A,
small - signal, high linearity, general purpose applications. It is suitable for
applications with frequencies from 0 to 6000 MHz such as Cellular, PCS,
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF.
Features
• Frequency: 0 - 6000 MHz
• P1dB: 20.5 dBm @ 900 MHz
• Small Signal Gain: 15.5 dB @ 900 MHz
• Third Order Output Intercept Point: 36 dBm @ 900 MHz
• Single 5 Volt Supply
• Active Bias
• Internally Matched to 50 Ohms
• Low Cost SOT - 89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
Document Number: MMG3015N
Rev. 0, 8/2007
MMG3015NT1
0 - 6000 MHz, 15.5 dB
20.5 dBm
InGaP HBT
12 3
CASE 1514 - 02, STYLE 1
SOT - 89
PLASTIC
Table 1. Typical Performance (1)
Characteristic
Symbol 900 2140
MHz MHz
Small - Signal Gain
(S21)
Gp 15.5 14.5
Input Return Loss
(S11)
IRL - 15 - 19
Output Return Loss
(S22)
ORL
- 13 - 9
Power Output @1dB P1db
Compression
20.5 20.5
Third Order Output
Intercept Point
IP3 36 33.5
1. VCC = 5 Vdc, TC = 25°C, 50 ohm system
3500
MHz
12.5
- 19
-7
18.5
30.5
Unit
dB
dB
dB
dBm
dBm
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage (2)
VCC 7 V
Supply Current (2)
ICC 300 mA
RF Input Power
Pin 12 dBm
Storage Temperature Range
Tstg - 65 to +150 °C
Junction Temperature (3)
TJ 150 °C
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 95 mA, TC = 25°C)
Characteristic
Symbol
Value (4)
Thermal Resistance, Junction to Case
RθJC
41.5
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
°C/W
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3015NT1
1
1 page  
50 OHM TYPICAL CHARACTERISTICS
38
37
36
35
34
33
4.8 4.9
f = 900 MHz
1 MHz Tone Spacing
5 5.1 5.2
VCC, COLLECTOR VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
−20
−30
−40
−50
VCC = 5 Vdc
−60 ICC = 95 mA
f = 900 MHz
1 MHz Tone Spacing
−70
5
10 15
20
Pout, OUTPUT POWER (dBm)
Figure 10. Third Order Intermodulation versus
Output Power
8
6
4
2
0
01
VCC = 5 Vdc
ICC = 95 mA
23
4
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
RF Device Data
Freescale Semiconductor
38
37
36
35
34 VCC = 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
33
−40 −20 0 20 40 60 80 100
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
105
104
103
120
125
130 135 140
145 150
TJ, JUNCTION TEMPERATURE (°C)
NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 95 mA
Figure 11. MTTF versus Junction Temperature
−20
VCC = 5 Vdc, ICC = 95 mA, f = 2140 MHz
Single−Carrier W−CDMA
−30 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−40
−50
−60
−70
2 4 6 8 10 12 14 16 18 20
Pout, OUTPUT POWER (dBm)
Figure 13. Single - Carrier W - CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3015NT1
5
5 Page 
PACKAGE DIMENSIONS
RF Device Data
Freescale Semiconductor
MMG3015NT1
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet MMG3015NT1.PDF ] | |
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