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부품번호 | MMG15241HT1 기능 |
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기능 | Enhancement Mode pHEMT | ||
제조업체 | Freescale Semiconductor | ||
로고 | |||
전체 18 페이지수
Freescale Semiconductor
Technical Data
Enhancement Mode pHEMT
Technology (E--pHEMT)
High Linearity Amplifier
The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed
in a SOT -- 89 standard plastic package. It is ideal for cellular, PCS, LTE,
TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the
500 to 2800 MHz frequency range. With high OIP3 and low noise figure, it can
be utilized as a driver amplifier in the transmit chain and as a second stage LNA
in the receive chain.
Features
Frequency: 500--2800 MHz
Noise Figure: 1.6 dB @ 2140 MHz
P1dB: 24 dBm @ 2140 MHz
Small--Signal Gain: 15.9 dB @ 2140 MHz
Third Order Output Intercept Point: 39.4 dBm @ 2140 MHz
Single 5 V Supply
Supply Current: 85 mA
50 Ohm Operation (some external matching required)
Cost--effective SOT--89 Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Document Number: MMG15241H
Rev. 2, 9/2014
MMG15241HT1
500--2800 MHz, 15.9 dB
24 dBm
E--pHEMT LNA/GPA
SOT--89
Table 1. Typical Performance (1)
Characteristic
900 2140 2600
Symbol MHz MHz MHz Unit
Noise Figure
NF 1.2 1.6 1.3 dB
Input Return Loss
(S11)
IRL --11.8 --21.3 --16.9 dB
Output Return Loss
(S22)
ORL --13.4 --16.2 --20.9 dB
Small--Signal Gain
(S21)
Gp 20.5 15.9 14.4 dB
Power Output @ 1dB P1db 24 24 24 dBm
Compression
Third Order Input
Intercept Point
IIP3 18.2 23.5 26.2 dBm
Third Order Output
Intercept Point
OIP3 38.7 39.4 40.6 dBm
1. VDD = 5 Vdc, TA = 25C, 50 ohm system, application circuit
tuned for specified frequency.
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
Symbol
VDD
IDD
Pin
Tstg
TJ
Value
6
130
23
--65 to +150
175
Unit
V
mA
dBm
C
C
Table 3. Thermal Characteristics
Characteristic
Symbol
Value (2)
Thermal Resistance, Junction to Case
Case Temperature 85C, 5 Vdc, 84 mA, no RF applied
RJC
59
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
C/W
Freescale Semiconductor, Inc., 2010–2011, 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMG15241HT1
1
50 OHM APPLICATION CIRCUIT: 2140 MHz
VSUPPLY
RF
INPUT
Z1
C2
Z4
C1
Z2
Z3 DUT Z5
C5
L1
Z6
C4
Z7
RF
OUTPUT
C3 C6
Z1 0.026 x 0.021 Microstrip
Z2 0.168 x 0.021 Microstrip
Z3 0.030 x 0.044 Microstrip
Z4 0.200 x 0.042 Microstrip
Z5 0.030 x 0.044 Microstrip
Z6 0.172 x 0.021 Microstrip
Z7 0.353 x 0.021 Microstrip
Figure 4. MMG15241HT1 Test Circuit Schematic
Table 8. MMG15241HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
C1
1.5 pF Chip Capacitor
GJM1555C1H1R5CB01D
C2
0.8 pF Chip Capacitor
GJM1555C1HR80BB01D
C3
0.7 pF Chip Capacitor
GJM1555C1HR70BB01D
C4
56 pF Chip Capacitor
GRM188RC1H560GA01D
C5
0.1 F Chip Capacitor
GRM188R71H104KA93D
C6
5.6 pF Chip Capacitor
GJM1555C1H5R6DB01D
L1
30 nH Chip Inductor
0603CS--30NXJLW
PCB
0.010, r = 3.38, Multilayer
IS680--338
Manufacturer
Murata
Murata
Murata
Murata
Murata
Murata
Coilcraft
Isola
MMG15241HT1
4
RF Device Data
Freescale Semiconductor, Inc.
4페이지 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz
--15
VDD = 5 Vdc, f = 2140 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 8.5 dB @ 0.01% Probability (CCDF)
--25
--35
TC = 85C
--45
--40C
25C
--55
14 16.5 19 21.5 24
Pout, OUTPUT POWER (dBm)
Figure 12. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
RF Device Data
Freescale Semiconductor, Inc.
MMG15241HT1
7
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
MMG15241HT1 | Enhancement Mode pHEMT | Freescale Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |