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MMG3014NT1 데이터시트 PDF




Freescale Semiconductor에서 제조한 전자 부품 MMG3014NT1은 전자 산업 및 응용 분야에서
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부품번호 MMG3014NT1 기능
기능 Heterojunction Bipolar Transistor
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MMG3014NT1 데이터시트, 핀배열, 회로
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3014NT1 is a general purpose amplifier that is internally input
matched and internally output prematched. It is designed for a broad range
of Class A, small--signal, high linearity, general purpose applications. It is
suitable for applications with frequencies from 40 to 4000 MHz such as
cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general
small--signal RF.
Features
Frequency: 40--4000 MHz
P1dB: 25 dBm @ 900 MHz
Small--Signal Gain: 19.5 dB @ 900 MHz
Third Order Output Intercept Point: 40.5 dBm @ 900 MHz
Single 5 V Supply
Active Bias
Cost--effective SOT--89 Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Document Number: MMG3014NT1
Rev. 4, 8/2014
MMG3014NT1
40--4000 MHz, 19.5 dB
25 dBm
InGaP HBT GPA
SOT--89
Table 1. Typical Performance (1)
Characteristic
900 2140 3500
Symbol MHz MHz MHz Unit
Small--Signal Gain
(S21)
Gp 19.5 15 10 dB
Input Return Loss
(S11)
Output Return Loss
(S22)
IRL
ORL
--25 --12 --8 dB
--11 --13 --19 dB
Power Output @1dB P1dB
Compression
25 25.8 25 dBm
Third Order Output
Intercept Point
OIP3 40.5 40.5 40 dBm
1. VCC = 5 Vdc, TA = 25C, 50 ohm system, application circuit
tuned for specified frequency.
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
Symbol Value
VCC
ICC
Pin
Tstg
TJ
6
300
25
--65 to +150
175
Unit
V
mA
dBm
C
C
Table 3. Thermal Characteristics
Characteristic
Symbol
Value (2)
Thermal Resistance, Junction to Case
Case Temperature 81C, 5 Vdc, 135 mA, no RF applied
RJC
27.4
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
C/W
Freescale Semiconductor, Inc., 2008, 2011, 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMG3014NT1
1




MMG3014NT1 pdf, 반도체, 판매, 대치품
50 OHM TYPICAL CHARACTERISTICS
42 42
40 40
f = 900 MHz
1 MHz Tone Spacing
38
4.5 4.7 4.9 5.1 5.3 5.5
VCC, COLLECTOR VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
--30
--40
--50
--60
--70
VCC = 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
--80
10
13 16 19 22
Pout, OUTPUT POWER (dBm)
25
Figure 10. Third Order Intermodulation versus
Output Power
10
8
6
4
2
0
01
VCC = 5 Vdc
23 4
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
MMG3014NT1
4
38
--40 --20
VCC = 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
0 20 40 60
T, TEMPERATURE (_C)
80 100
Figure 9. Third Order Output Intercept Point
versus Case Temperature
105
104
103
120
125
130 135 140
145 150
TJ, JUNCTION TEMPERATURE (C)
NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 135 mA
Figure 11. MTTF versus Junction Temperature
--20
VCC = 5 Vdc, f = 2140 MHz
--30
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF
--40
--50
--60
--70
10 13 16 19 22 25
Pout, OUTPUT POWER (dBm)
Figure 13. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
RF Device Data
Freescale Semiconductor, Inc.

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MMG3014NT1 전자부품, 판매, 대치품
50 OHM APPLICATION CIRCUIT: 2300--2700 MHz
VSUPPLY
R1
RF
INPUT
Z1
C1
Z2
Z3
C5
DUT
VCC
Z4
L1
Z5
C6
C3 C4
Z6 Z7
C2
RF
OUTPUT
Z1, Z7
Z2
Z3
Z4
0.347x 0.058Microstrip
0.488x 0.058Microstrip
0.087x 0.058Microstrip
0.136x 0.058Microstrip
Z5
Z6
PCB
0.036x 0.058Microstrip
0.403x 0.058Microstrip
Getek Grade ML200C, 0.031, r = 4.1
Figure 20. 50 Ohm Test Circuit Schematic
20
S21
10
0
--10 S11
--20
VCC = 5 Vdc
--30
2100
2300
S22
2500
f, FREQUENCY (MHz)
2700
2900
Figure 21. S21, S11 and S22 versus Frequency
R1
C4
C3
C1 L1 C2
C5
C6
MMG30XX
Rev 2
Figure 22. 50 Ohm Test Circuit Component Layout
Table 10. 50 Ohm Test Circuit Component Designations and Values
Part Description
C1, C2
22 pF Chip Capacitors
C3 0.1 F Chip Capacitor
C4 2.2 F Chip Capacitor
C5, C6
1.1 pF Chip Capacitors
L1 15 nH Chip Inductor
R1 0 Chip Resistor
Part Number
C0805C220J5GAC
C0603C104J5RAC
C0805C225J4RAC
C0603C119J5GAC
HK160815NJ--T
ERJ3GEY0R00V
Manufacturer
Kemet
Kemet
Kemet
Kemet
Taiyo Yuden
Panasonic
RF Device Data
Freescale Semiconductor, Inc.
MMG3014NT1
7

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부품번호상세설명 및 기능제조사
MMG3014NT1

Heterojunction Bipolar Transistor

Freescale Semiconductor
Freescale Semiconductor

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