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부품번호 | ATF-551M4 기능 |
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기능 | Low Noise Enhancement Mode Pseudomorphic HEMT | ||
제조업체 | AVAGO | ||
로고 | |||
전체 23 페이지수
ATF-551M4
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Miniature Leadless Package
Data Sheet
Description
Avago Technologies’ ATF-551M4 is a high dynamic
range, super low noise, single supply E‑pHEMT GaAs FET
housed in a thin miniature leadless package.
The combination of small device size, super low noise
(under 1 dB Fmin from 2 to 6 GHz), high linearity and
low power makes the ATF-551M4 ideal for LNA or hybrid
module designs in wireless receiver in the 450 MHz to
10 GHz frequency band.
Applications include Cellular/PCS/ WCDMA handsets
and data modem cards, fixed wireless infrastructure
in the 2.4, 3.5 GHz and UNII frequency bands, as well
as 2.4 GHz 802.11b, 5 GHz 802.11a and HIPERLAN/2
Wireless LAN PC-cards.
Note:
1. Avago’s enhancement mode E-pHEMT devices are the first com-
mercially available single-supply GaAs transistors that do not need
a negative gate bias voltage for operation. They can help simplify
the design and reduce the cost of receivers and transmitters in many
applications in the 450 MHz to 10 GHz frequency range.
MiniPak 1.4 mm x 1.2 mm Package
Vx
Pin Connections and Package Marking
Features
• Very low noise figure and high linearity
• Single Supply Enhancement Mode Technology[1]
optimized for 3V operation
• Excellent uniformity in product specifications
• 400 micron gate width
• Thin miniature package 1.4 mm x 1.2 mm x 0.7 mm
• Tape-and-reel packaging option available
Specifications
• 2 GHz; 2.7V, 10 mA (typ.)
• 24.1 dBm output 3rd order intercept
• 14.6 dBm output power at 1 dB gain compression
• 0.5 dB noise figure
• 17.5 dB associated gain
Applications
• Low Noise Amplifier for:
– Cellular/PCS/WCDMA handsets and modem cards
– 2.4 GHz, 3.5 GHz and UNII fixed wireless infrastructure
– 2.4 GHz 802.11b Wireless LAN
– 5 GHz 802.11a and HIPERLAN Wireless LAN
• General purpose discrete E-pHEMT for other ultra low
noise applications
Source
Drain
VxPin3 Pin4
Gate Source
Pin 2 Pin 1
Note:
Top View. Package marking provides orientation, product identifica-
tion and date code.
“V” = Device Type Code
“x” = Date code character. A different character is assigned for each
month and year.
ATF-551M4 Typical Performance Curves
26
25
24
23
22
21
2V
20 2.7V
3V
19
18
0 5 10 15 20 25 30 35
Ids (mA)
Figure 6. Gain vs. Ids and Vds at 900 MHz[1].
0.50
0.45
2V
2.7V
3V
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0 5 10 15 20 25 30 35
Ids (mA)
Figure 7. Fmin vs. Ids and Vds at 900 MHz[2].
32
30
28
26
24
22
2V
20 2.7V
3V
18
16
0 5 10 15 20 25 30 35
Ids (mA)
Figure 8. OIP3 vs. Ids and Vds at 900 MHz[1].
7
6
5
4
3
2
1
0 2V
2.7V
-1 3V
-2
0 5 10 15 20 25 30 35
Ids (mA)
Figure 9. IIP3 vs. Ids and Vds at 900 MHz[1].
18
17
16
15
14
13
12
11 2V
2.7V
10 3V
9
0 5 10 15 20 25 30 35
Ids (mA)
Figure 10. P1dB vs. Ids and Vds at 900 MHz[1].
Notes:
1. Measurements at 900MHz were made using an ICM fixture with a double stub tuner at the input tuned for low noise and a double stub tuner
at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
4페이지 ATF-551M4 Typical Performance Curves, continued
30 1.6
-40°C
25°C
1.4
-40°C
25°C
25 85°C 85°C
1.2
20 1.0
0.8
15 0.6
0.4
10
0.2
5
0123 4 5
FREQUENCY (GHz)
Figure 21. Gain vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1].
6
0
0123 4 5
FREQUENCY (GHz)
Figure 22. Fmin vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[2].
6
25
24
23
22
21
-40°C
20
25°C
85°C
19
0123 4 5
FREQUENCY (GHz)
Figure 23. OIP3 vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1].
6
20
15
10
5
0
-40°C
-5
25°C
85°C
-10
0
1234
FREQUENCY (GHz)
5
6
Figure 24. IIP3 vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1].
16
15
14
13
12
-40°C
11
25°C
85°C
10
01 2 3 4 56
FREQUENCY (GHz)
Figure 25. P1dB vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1].
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise fig-
ure at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based
on production test board requirements. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned
for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measure-
ments.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
7페이지 | |||
구 성 | 총 23 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
ATF-551M4 | Low Noise Enhancement Mode Pseudomorphic HEMT | AVAGO |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |