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PDF MGA-645T6 Data sheet ( Hoja de datos )
| Número de pieza | MGA-645T6 | |
| Descripción | Low Noise Amplifier | |
| Fabricantes | AVAGO | |
| Logotipo |  |
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MGA-645T6
Low Noise Amplifier with Bypass/Shutdown Mode
in Low Profile Package
Data Sheet
Description
Avago Technologies’ MGA-645T6 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA) with Bypass/
Shutdown mode. The LNA has low noise and high linearity
achieved through the use of Avago Technologies’ proprie-
tary 0.5um GaAs Enhancement-mode pHEMT process. The
Bypass/Shutdown mode enables the LNA to be bypassed
during high input signal power and reduce current con-
sumption. It is housed in a low profile 2 x 1.3 x 0.4mm
6-pin Ultra Thin Package. The compact footprint and low
profile coupled with low noise, high linearity make the
MGA-645T6 an ideal choice as a low noise amplifier for
mobile receiver in the WiMax, WLAN(802.11b/g), WiBro
and DMB applications.
Component Image
.
4FYM
Note:
Package marking provides
orientation and identification
“4F” = Product Code
“Y” = Year of manufacture
“M” = Month of manufacture
Pin Configuration
Pin 1
(Vbypass)
Pin 2
(RF_IN)
GND
Pin 6
(Not Used)
Pin 5
(RF_OUT)
Pin 3
(GND)
Top View
Pin 4
(VDD)
Simplified Schematic
Vbypass 1
MGA-645T6
bias/control
RFin 2
6
5 L3
RFout
L1 3
4 L2
Vdd
C1 C2
Features
• 2.0 x 1.3 x 0.4 mm3 6-lead Ultra Thin Package
• Low bias current
• Simple matching network
• 1.5 GHz – 3 GHz operating range
• Adjustable bias current
• Low Noise Figure
• Bypass/Shutdown Mode using a single pin
• Low current consumption in Bypass Mode, <100uA
• Fully matched to 50 ohm in Bypass Mode
• High Linearity (LNA and Bypass Mode)
• Low profile package
Typical Performance
2.4 GHz; 3V, 7mA (typ):
• 15 dB Gain
• 1.1 dB Noise Figure with 9dB Input Return Loss
• +7 dBm Input IP3
• -5 dBm Input Power at 1dB gain compression
• 4.5 dB Insertion Loss in Bypass Mode
• 16dBm IIP3 in Bypass Mode (Pin = -20dBm)
• <100uA current consumption in Bypass & Shutdown
Mode
Applications
• Low noise amplifier for GPS, WiMax, WLAN, WiBro and
DMB applications.
• Other ultra low noise applications in the 1.5 – 3 GHz
band
Attention: Observe precautions for handling
electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
1 page  
LNA Mode Plots (2.3 – 2.4 GHz match) ; Vdd = 3V
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
2
4mA
7mA
12mA
2.2 2.4 2.6 2.8
Freq,GHz
3
Figure 8. LNA Mode Noise Figure vs Frequency vs Id
17
16.5
16
15.5
15
14.5
14 -40 DegC
13.5 25 DegC
13 85 DegC
12.5
12
4 5 6 7 8 9 10 11 12
Id,mA
Figure 10. LNA Mode Gain vs Id vs Temperature
0
-1 -40 DegC
25 DegC
-2 85 DegC
-3
-4
-5
-6
-7
4 5 6 7 8 9 10 11 12
Id,mA
Figure 12. LNA Mode IP1dB vs Id vs Temperature
18
16
14
12
10 4mA
8 7mA
12mA
6
2 2.2 2.4 2.6 2.8
Freq,GHz
Figure 9. LNA Mode Gain vs Frequency vs Id
3
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
456789
Id,mA
Figure 11. LNA Noise Figure vs Id vs Temperature
-40 DegC
25 DegC
85 DegC
10 11 12
9
8
7
6
5
4
3 -40 DegC
2 25 DegC
1 85 DegC
0
4 5 6 7 8 9 10 11
Id,mA
Figure 13. LNA Mode IIP3 vs Id vs Temperature
12
5 Page 
MGA-645T6 LNA Mode typical noise parameters at 25 °C, Vdd = 3V ; Id = 7mA
Freq.(GHz)
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
Fmin (dB)
0.55
0.57
0.59
0.62
0.72
0.75
0.78
0.8
0.83
0.85
0.88
0.91
0.95
0.98
1.02
1.06
1.09
1.12
1.15
1.18
1.21
Γopt Mag
0.76
0.76
0.75
0.75
0.69
0.68
0.67
0.66
0.65
0.63
0.62
0.61
0.6
0.59
0.58
0.57
0.56
0.56
0.55
0.55
0.54
Γopt Ang
67.8
71.04
74.29
77.54
79.72
82.9
86.08
89.11
92.14
95.17
98.2
100.88
103.56
106.24
108.92
111.6
114.08
116.56
119.04
121.52
124
Rn/50
0.23
0.22
0.21
0.21
0.2
0.2
0.2
0.19
0.18
0.18
0.17
0.16
0.16
0.15
0.14
0.14
0.13
0.13
0.12
0.12
0.11
11
11 Page | ||
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| PDF Descargar | [ Datasheet MGA-645T6.PDF ] | |
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