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ATF-541M4 데이터시트 PDF




Agilent에서 제조한 전자 부품 ATF-541M4은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 ATF-541M4 기능
기능 Low Noise Enhancement Mode Pseudomorphic HEMT
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ATF-541M4 데이터시트, 핀배열, 회로
Agilent ATF-541M4 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Miniature Leadless Package
Data Sheet
Description
Agilent Technologies’s
ATF-541M4 is a high linearity,
low noise, single supply
E-PHEMT housed in a miniature
leadless package.
The ATF-541M4’s small size and
low profile makes it ideal for the
design of hybrid module and
other space-constraint devices.
The device can be used in appli-
cations such as TMA and front
end LNA for Cellular/PCS and
WCDMA base stations, LNA and
driver amplifiers for Wireless
Data and 802.11b WLAN.
In addition, the device’s superior
RF performance at higher
frequency makes it an ideal
candidate for high frequency
applications such as WLL,
802.11a WLAN, 5–6 GHz UNII
and HIPERLAN applications.
MiniPak 1.4 mm x 1.2 mm Package
Rx
Pin Connections and
Package Marking
Source
Pin 3
Gate
Pin 2
Rx
Drain
Pin 4
Source
Pin 1
Note:
Top View. Package marking provides orientation,
product identification and date code.
“R” = Device Type Code
“x” = Date code character. A different
character is assigned for each month and
year.
Features
• High linearity performance
• Single Supply Enhancement Mode
Technology[1]
• Very low noise figure
• Excellent uniformity in product
specifications
• 800 micron gate width
• Miniature leadless package
1.4 mm x 1.2 mm x 0.7 mm
• Tape-and-Reel packaging option
available
Specifications
2 GHz; 3V, 60 mA (Typ.)
• 35.8 dBm output 3rd order intercept
• 21.4 dBm output power at 1 dB gain
compression
• 0.5 dB noise figure
• 17.5 dB associated gain
Applications
• Low Noise Amplifier and Driver
Amplifier for Cellular/PCS and
WCDMA Base Stations
• LNA and Driver Amplifier for
WLAN, WLL/RLL and MMDS
applications
• General purpose discrete E-PHEMT
for ultra low noise applications in
the 450 MHz to 10 GHz frequency
range
Note:
1. Enhancement mode technology requires
positive Vgs, thereby eliminating the need for
the negative gate voltage associated with
conventional depletion mode devices.




ATF-541M4 pdf, 반도체, 판매, 대치품
ATF-541M4 Typical Performance Curves
0.60
0.55
0.50
0.45
0.40
0.35
0
20 40
60 80 100
Ids (mA)
Figure 6. Fmin vs. Ids at 2 GHz, Vds = 3V[1]
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0
20 40 60 80 100
Ids (mA)
Figure 7. Fmin vs. Ids at 900 MHz, Vds = 3V[1]
40
Gain
OIP3
35 P1dB
2.5
2.0
30 1.5
25
20
15
0 20 40 60 80 100
Ids (mA)
Figure 9. Gain, OIP3 & P1dB vs. Ids Tuned
for Max OIP3 and Min NF at 900 MHz,
Vds = 3V[3].
1.0
0.5
80 mA
60 mA
40 mA
0
0 2 4 6 8 10 12
FREQUENCY (GHz)
Figure 10. Fmin vs. Frequency vs. Ids,
Vds = 3V[1].
Notes:
1. Fmin and associated gain at minimum noise
figure (Ga) values are based on a set of
16 noise figure measurements made at
16 different impedances using an ATN NP5
test system. From these measurements a true
Fmin and Ga is calculated. Refer to the noise
parameter application section for more
information.
2. Measurements obtained using production
test board described in Figure 5.
3. Input tuned for minimum NF and the output
tuned for maximum OIP3 using an
InterContinental Microwave (ICM) test
fixture, double stub tuners and bias tees.
40
Gain
35 OIP3
P1dB
30
25
20
15
10
0 20 40 60 80 100
Ids (mA)
Figure 8. Gain, OIP3 & P1dB vs. Ids Tuned
for Max OIP3 and Min NF at 2 GHz,
Vds = 3V[2].
30
40 mA
25 60 mA
80 mA
20
15
10
5
0 2 4 6 8 10
FREQUENCY (GHz)
Figure 11. Ga vs. Frequency vs. Ids,
Vds = 3V[1].
12
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ATF-541M4 전자부품, 판매, 대치품
ATF-541M4 Typical Scattering Parameters, VDS = 3V, IDS = 60 mA
Freq.
GHz
S11
Mag. Ang.
S21
dB Mag. Ang.
S12
Mag. Ang.
0.1 0.99 -17.6
0.5 0.87 -74.7
0.9 0.78 -110.7
1.0 0.76 -117.6
1.5 0.72 -140.1
1.9 0.70 -152.6
2.0 0.70 -157.5
2.5 0.69 -170.4
3.0 0.69 -179.9
4.0 0.69 165.7
5.0 0.70 153.8
6.0 0.71 138.8
7.0 0.71 128.6
8.0 0.73 118.6
9.0 0.74 109.2
10.0 0.76 99.9
11.0 0.77 89.7
12.0 0.79 81.5
13.0 0.80 71.8
14.0 0.83 61.7
15.0 0.85 52.2
16.0 0.86 42.1
17.0 0.90 33.2
18.0 0.90 24.3
28.36
26.04
23.13
22.42
19.54
17.73
17.19
15.45
13.91
11.53
9.66
8.25
6.89
5.76
4.72
3.80
3.03
2.23
1.45
0.58
-0.31
-1.41
-2.34
-3.53
26.18
20.03
14.34
13.22
9.49
7.70
7.24
5.92
4.96
3.77
3.04
2.58
2.21
1.94
1.72
1.55
1.42
1.29
1.18
1.07
0.96
0.85
0.76
0.67
168.9
133.9
113.5
109.4
95.1
86.9
85.7
77.9
70.8
58.3
46.8
34.8
24.4
14.3
4.4
-5.7
-16.0
-26.3
-36.3
-47.4
-58.1
-67.9
-76.8
-84.8
0.01 85.1
0.03 54.2
0.04 41.8
0.04 40.2
0.05 34.6
0.05 32.8
0.05 33.5
0.05 34.1
0.06 33.4
0.07 32.8
0.08 32.0
0.09 28.2
0.10 25.1
0.11 21.1
0.12 16.6
0.13 11.2
0.14 5.5
0.15 -1.1
0.16 -8.7
0.17 -15.6
0.17 -23.4
0.17 -31.6
0.17 -38.7
0.17 -45.8
S22
Mag. Ang.
0.54 -11.3
0.41 -48.1
0.30 -70.1
0.28 -74.9
0.20 -92.5
0.17 -103.3
0.14 -108.9
0.12 -122.4
0.10 -138.7
0.10 -164.1
0.09 174.9
0.11 162.9
0.12 149.1
0.14 138.7
0.17 129.5
0.19 119.3
0.23 108.8
0.27 98.6
0.32 89.2
0.38 80.3
0.44 71.7
0.49 64.3
0.57 58.8
0.62 54.7
MSG/MAG
dB
34.18
28.25
25.54
25.19
22.78
21.88
21.61
20.73
19.17
15.26
13.21
11.80
10.30
9.42
8.46
7.86
7.21
6.73
6.11
5.98
5.54
4.75
5.73
4.51
Typical Noise Parameters, VDS = 3V, IDS = 60 mA
Freq Fmin
GHz dB
Γopt
Mag.
Γopt
Ang.
Rn/50
0.5 0.12 0.37 13.2 0.05
0.9 0.16 0.34 10.9 0.06
1.0 0.19 0.21 30.8 0.04
1.9
0.45
0.22
102.9
0.05
2.0
0.46
0.21
104.2
0.05
2.4
0.57
0.23
125.2
0.05
3.0
0.62
0.30
149.0
0.04
3.9
0.80
0.35
173.1
0.04
5.0
1.02
0.43
-168.3
0.05
5.8
1.17
0.46
-155.8
0.06
6.0
1.22
0.51
-146.4
0.09
7.0
1.41
0.52
-137.0
0.11
8.0
1.49
0.54
-129.5
0.15
9.0
1.69
0.56
-115.1
0.25
10.0 1.87 0.61 -99.8 0.40
Ga
dB
27.06
22.88
22.44
19.17
18.69
17.57
16.26
14.54
12.97
11.85
10.98
10.03
9.66
8.82
8.32
40
35
MSG
30
25
20
15
MAG
10
5 |S21|2
0
-5
-10
0 5 10 15
FREQUENCY (GHz)
Figure 17. MSG/MAG and |S21|2 vs.
Frequency at 3V, 60 mA.
20
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. Refer to the applications section for additional information on the test fixture used for the measurement of the s and noise parameters.
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관련 데이터시트

부품번호상세설명 및 기능제조사
ATF-541M4

Low Noise Enhancement Mode Pseudomorphic HEMT

Agilent
Agilent
ATF-541M4

Low Noise Enhancement Mode Pseudomorphic HEMT

AVAGO
AVAGO

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