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PDF MGA-655T6 Data sheet ( Hoja de datos )
| Número de pieza | MGA-655T6 | |
| Descripción | Low Noise Amplifier | |
| Fabricantes | AVAGO | |
| Logotipo |  |
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MGA-655T6
Low Noise Amplifier with Bypass Mode
in Low Profile Package
Data Sheet
Description
Avago Technologies’ MGA-655T6 is an economical,
easy-to-use GaAs MMIC Low Noise Amplifier (LNA) with
Bypass mode. The LNA has low noise and high linear-
ity achieved through the use of Avago Technologies’
proprietary 0.5 μm GaAs Enhancement-mode pHEMT
process. The Bypass mode enables the LNA to be by-
passed during high input signal power and reduce
current consumption. It is housed in a low profile 2 x 1.3
x 0.4 mm 6-pin Ultra Thin Package. The compact foot-
print and low profile coupled with low noise, high linear-
ity make the MGA-655T6 an ideal choice as a low noise
amplifier for mobile and CPE receivers in the WiMax and
WLL (2.5-4) GHz band.
Component Image
2.0 x 1.3 x 0.4 mm3 6-Lead Ultra Thin Package
Features
x Low nominal operating current
x Simple input/output matching network
x Broadband operation (2.5 – 4 ) GHz
x Adjustable bias current for gain/IP3 optimization
x Very low noise figure
x Bypass mode using a single pin
x Low current consumption in bypass mode, <100 μA
x Fully matched to 50 ohm in bypass mode
x High Linearity in LNA and bypass mode
x GaAs E-pHEMT Technology[1]
x Low profile package size: 2.0 x 1.3 x 0.4 mm3
x Excellent uniformity in product specifications
x Tape-and-reel packaging option available
5FYM
Note:
Packsage marking provides orientation and identification
“5F” = Product Code
“Y” = Year of Manufacture
“M” = Month of Manufacture
Pin Configuration
PIN 1 (Bypass)
PIN 6 (Not Used)
PIN 2 (RF_In)
GND
PIN 5 (RF_Out)
PIN 3 (Ground)
TOP VIEW
PIN 4 (VDD)
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 200 V
Refer to Avago Technologies Application Note A004R:
Electrostatic Discharge, Damage and Control.
Typical Performance
x 3.5 GHz; Vdd = 3 V, Vbypass = 2.7 V (typ.),Ids = 10 mA
(typ.)
x 14.7 dB gain
x 1.2 dB noise figure
x +5.5 dBm Input IP3
x -2 dBm input power at 1 dB gain compression
x 4.2 dB insertion loss in bypass mode
x 19 dBm IIP3 in bypass mode (pin = -20 dBm)
x <104 μA current consumption in bypass & shutdown
mode
Applications
x Low noise amplifier for Wimax, Wireless Local Loop
x Other ultra low noise applications in the (2.5 – 4) GHz
band
Note:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
1 page  
MGA-655T6 Typical Performance (3.5 GHz Match)
TA = +25°C, Vdd = 3 V, Ids = 10 mA (Vbypass = 2.7 V),
RF measurement at 3. GHz, input signal = CW unless stated otherwise.
14
12
10
8
6
4 -40°C
25°C
2 85°C
0
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7
Vbypass (V)
Figure 6. Id vs. Vbypass vs. temperature (Vdd = 3 V)
S21
S22
S11
S12
FREQUENCY (GHz)
Figure 7. LNA mode S21, S11, S22, S12 vs. frequency
5
5 Page 
MGA -655T6 LNA Mode typical Noise Parameters at 25 qC, Vdd=3V; Vbypass=2.7V; Idd=10mA
Freq (GHz)
FMIN (dB)
GAMMA,Mag
OPT,Ang
Rn @ 50 Ohm
2 0.96 0.55 71.4 0.25
2.4 0.92 0.59 83.2 0.29
2.6 0.85 0.51 81.2 0.25
3.3
0.815
0.36
99.4
0.22
3.5
0.745
0.47
105.8
0.21
3.8 0.715 0.46 111.5 0.2
4 0.698 0.55 110.6 0.21
5
0.9
0.3
145.2
0.17
5.5 0.97 0.39 178.4 0.14
5.8 1.07 0.29 -173.1 0.13
6 1.16 0.32 -162.7 0.14
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet MGA-655T6.PDF ] | |
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