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Número de pieza | WS2111 | |
Descripción | 4 x 4 Power Amplifier Module | |
Fabricantes | Agilent | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WS2111 (archivo pdf) en la parte inferior de esta página. Total 20 Páginas | ||
No Preview Available ! Agilent WS2111
4 x 4 Power Amplifier Module
for UMTS850 (824 – 849 MHz)
Data Sheet
Description
The WS2111, a Wide-band Code
Division Multiple Access
(WCDMA) Power Amplifier (PA),
is a fully matched 10-pin surface
mount module developed for
WCDMA handset applications.
This power amplifier module
operates in the 824–849 MHz
bandwidth. The WS2111 meets
the stringent WCDMA linearity
requirements for output power of
up to 28 dBm. A low current
(Vcont) pin is provided for high
efficiency improvement of the
low output power range.
The WS2111 features CoolPAM
Circuit technology offering state-
of-the-art reliability, temperature
stability and ruggedness.
The WS2111 is self contained,
incorporating 50ohm input and
output matching networks.
Features
• CoolPAM circuit technology
• Good linearity
• High efficiency
• 10-pin surface mounting package
(4 mm x 4 mm x 1.4 mm)
• Low power-state control
• Internal 50Ω matching networks
for both RF input and output
• Low quiescent current
Applications
• W-CDMA Handsets
• HSDPA Handsets
Functional Block Diagram
Vcc2(6)
RF Input (4)
Input
Match
DA
Inter
Stage
Match
PA
Vcc1 (5)
MMIC
Bias Circuit & Control Logic
Vcont(2)
Vref(1)
Output
Match
RF Output (8)
MODULE
1 page Characterization Data ( HSDPA, Control scheme: 3-mode control, Vcc = 3.4V, Vref = 2.85V, T = 25°C, Fo = 837 MHz)
500
450
400
350
300
250
200
150
100
50
0
-10
-5
0
5 10 15 20 25 30
Pout (dBm)
Figure 1. Total Current vs. Output Power.
50
45
40
35
30
25
20
15
10
5
0
-10 -5 0 5 10 15 20 25
Pout (dBm)
Figure 3. Power Added Efficiency vs. Output Power.
30
-40
-45
-50
-55
-60
-65
-70
-10 -5
0
5 10 15 20 25 30
Pout (dBm)
Figure 5. Adjacent Channel Leakage Ratio 2 vs. Output
Power.
30
25
20
15
10
5
0
-10 -5 0 5 10 15 20 25 30
Pout (dBm)
Figure 2. Gain vs. Output Power.
-30
-35
-40
-45
-50
-55
-60
-10 -5
0
5 10 15 20 25 30
Pout (dBm)
Figure 4. Adjacent Channel Leakage Ratio 1 vs. Output
Power.
5
5 Page Peripheral Circuit in Handset
MSM
PA_ON
PA_R0
+2.85V
R1
RF In
C2
Vdd
RF SAW
C1
C3
C8
WS2111
Vref
Vcont
GND
IN
Vcc1
GND
GND
OUT
GND
Vcc2
Output Matching Circuit
C6 RF Out
Duplexer
C7 L1
C4
C5
Figure 21. Peripheral Circuit.
V BATT
Notes:
1. Recommended voltage for Vref is 2.85V.
2. Place C1 near to Vref pin.
3. Place C3 and C4 close to pin 5 (Vcc1) and pin 6 (Vcc2). These capacitors can affect the RF performance.
4. Use 50Ω transmission line between PAM and Duplexer and make it as short as possible to reduce conduction loss.
5. π-type circuit topology is good to use for matching circuit between PA and Duplexer,.
6. Pull-up resistor (R1) should be used to limit current drain. 6.2 kohm is recommended for WS2111.
11
11 Page |
Páginas | Total 20 Páginas | |
PDF Descargar | [ Datasheet WS2111.PDF ] |
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