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WS2411 데이터시트 PDF




Agilent에서 제조한 전자 부품 WS2411은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 WS2411 기능
기능 4 x 4 Power Amplifier Module
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WS2411 데이터시트, 핀배열, 회로
Agilent WS2411
4 x 4 Power Amplifier Module
for UMTS1900 (1850 – 1910 MHz)
Data Sheet
Description
The WS2411, a Wide-band Code
Division Multiple Access
(WCDMA) Power Amplifier (PA),
is a fully matched 10-pin surface
mount module developed for
WCDMA handset applications.
This power amplifier module
operates in the 1850–1910 MHz
bandwidth. The WS2411 meets
the stringent WCDMA linearity
requirements for output power of
up to 28.5 dBm. A low current
(Vcont) pin is provided for high
efficiency improvement of the
low output power range.
The WS2411 features CoolPAM
Circuit technology offering state-
of-the-art reliability, temperature
stability and ruggedness.
The WS2411 is self contained,
incorporating 50ohm input and
output matching networks.
Features
• CoolPAM circuit technology
• Good linearity
• High efficiency
• 10-pin surface mounting package
(4 mm x 4 mm x 1.4 mm)
• Low power-state control
• Low quiescent current
• Internal 50matching networks
for both RF input and output
Applications
• WCDMA handsets
• HSDPA handsets
Functional Block Diagram
Vcc2(10)
RF Input (2)
Input
Match
DA
Inter
Stage
Match
PA
Vcc1 (1)
MMIC
Bias Circuit & Control Logic
Vcont(4)
Vref(5)
Output
Match
RF Output (8)
MODULE




WS2411 pdf, 반도체, 판매, 대치품
Table 4, continued. Electrical Characteristics for WCDMA Mode (Vref=2.85V, Vcc=3.4V, T =+25°C)
Characteristics
Symbol Condition
Min. Typ. Max. Unit
Ruggedness
Ru Pout<28.5dBm, Pin<10dBm, All phase – – 10:1 VSWR
Phase discontinuity
Ph mid_hi Mid <> Hi at Pout=16.0dBm
Ph low_mid Low <> Mid at Pout=7.0dBm
12 25 Degree
12 25 Degree
Switching Time High [5]
DC
RF
TswhighDC
TswhighRF
20 µs
1 µs
Switching Time Low [5] DC TswlowDC
RF TswlowRF
20 µs
1 µs
Turn On Time [6]
DC TonDC
RF TonRF
20 µs
1 µs
Turn Off Time [6]
DC ToffDC
RF ToffDC
20 µs
1 µs
Notes:
5. TswhighDC, TswlowDC is time required to reach stable quiescent bias (10%) after Vcont is switched low and high, respectively. TswhighRF, TswlowRF is
time required to reach final output power(±1dB) after Vcont is switched low and high, respectively. TonDC is time required to reach stable quiescent
bias (10%) after Vref is switched high.
6. ToffDC is time required for the current to be less than 10% of the Iq after Vref is switched low. TonRF is time required to reach final output power
(±1 dB) after Vref is switched high. ToffRF is time required to output power to drop 30dB after Vref is switched low.
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WS2411 전자부품, 판매, 대치품
Characteristics Data (WCDMA, Control scheme: 2-mode control, Vcc = 3.4V, Vref = 2.85V, T = 25°C,
Fo = 1880 MHz)
550
500
450
400
350
300
250
200
150
100
50
0
-10
-5
0
5 10 15 20 25 30
Pout (dBm)
Figure 11. Total Current vs. Output Power.
30
25
20
15
10
5
0
-10 -5 0 5 10 15 20 25 30
Pout (dBm)
Figure 12. Gain vs. Output Power.
45
40
35
30
25
20
15
10
5
0
-10 -5 0 5 10 15 20 25
Pout (dBm)
Figure 13. Power Added Efficiency vs. Output Power.
30
-30
-35
-40
-45
-50
-55
-60
-10 -5
0
5 10 15 20 25 30
Pout (dBm)
Figure 14. Adjacent Channel Leakage Ratio 1 vs. Output Power.
-40
-45
-50
-55
-60
-65
-70
-10 -5
0
5 10 15 20 25 30
Pout (dBm)
Figure 15. Adjacent Channel Leakage Ratio 2 vs. Output Power.
-20
2fo
-30 3fo
-40
-50
-60
-70
-80
-15 -10 -5
0
5 10 15 20 25
Pout (dBm)
Figure 16. Harmonic Suppression 2 vs. Output Power.
30
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