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부품번호 | WS2512-TR1G 기능 |
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기능 | 4 x 4 Power Amplifier Module | ||
제조업체 | Avago | ||
로고 | |||
WS2512-TR1G
4 x 4 Power Amplifier Module
for UMTS2100 (1920-1980 MHz)
Data Sheet
Description
Features
The WS2512-TR1G, a Wide-band Code Division Multiple
Access (WCDMA) Power Amplifier (PA), is a fully matched
10-pin surface mount module developed for WCDMA
handset applications. This power amplifier module
operates in the 1920-1980 MHz bandwidth.The WS2512-
TR1G meets the stringent WCDMA linearity requirements
for output power of up to 28 dBm.
A low current (Vcont) pin is provided for high efficiency
improvement of the low output power range.
• Excellent linearity
• Low quiescent current
• High efficiency
• 10-pin surface mounting package
4 mm x 4 mm x 1.1 mm (typ.)
• Internal 50 Ω matching networks for both RF input
and output
• RoHS compliant
The WS2512-TR1G features CoolPAM circuit technology
offering state-of-the-art reliability, temperature stability
and ruggedness. The WS2512-TR1G is self contained, in-
corporating 50 Ω input and output matching networks.
Applications
• WCDMA handset (HSDPA)
Functional Block Diagram
Vcc2 (10)
RF
INPUT
(2)
Vcc1 (1)
INPUT
MATCH
DA
INTER
STAGE
MATCH
PA
MMIC
BIAS CIRCUIT & CONTROL LOGIC
Vcont (4)
Vref (5)
OUTPUT
MATCH
MODULE
RF
OUTPUT
(8)
Order Information
Part Number
WS2512-TR1G
No. of Devices
1,000
Container
7" Tape and Reel
Table 4. Electrical Characteristics for WCDMA Mode (Vcc = 3.4 V, Vref = 2.85 V, T = 25°C, Zin/Zout = 50 Ω)[1] (cont’d.)
Characteristics
Symbol Condition
Min. Typ. Max. Unit
Switching Time Low [4]
DC TswlowDC
RF TswlowRF
–
20 –
1–
µs
µs
Turn On Time[5]
DC TonDC
RF TonRF
–
20 –
1–
µs
µs
Turn Off Time[6]
DC ToffDC
RF ToffRF
–
20 –
1–
µs
µs
Notes:
1. Electrical characteristics are specified under WCDMA modulated (3 GPP Uplink DPCCH + 1DPDCH ) signal unless specified otherwise.
2. Control current when series 6.2 kΩ is used.
3. ACP is expressed as a ratio of total adjacent power to signal power, both with 3.84 MHz bandwidth at specified offsets.
4. TswhighDC, TswlowDC is time required to reach stable quiescent bias (10%) after Vcont is switched low and high, respectively.
TswhighRF, TswlowRF is time required to reach final output power (± 1 dB) after Vcont is switched low and high, respectively.
5. TonDC is time required to reach stable quiescent bias (10%) after Vref is switched high.
ToffDC is time required for the current to be less than 10% of the Iq after Vref is switched low.
6. TonRF is time required to reach final output power (±1 dB) after Vref is switched high.
ToffRF is time required to output power to drop 30 dB after Vref is switched low.
Table 5. Electrical Characteristics for HSDPA Mode (Vcc = 3.4 V, Vref = 2.85 V, T = 25°C, Zin/Zout = 50 Ω)[1]
Characteristics
Operating Frequency Range
Gain
Power Added Efficiency
Total Supply Current
Adjacent Channel Leakage Ratio[2]
5 MHz offset
10 MHz offset
5 MHz offset
10 MHz offset
5 MHz offset
10 MHz offset
Symbol
F
Gain_hih
Gain_midh
Gain_lowh
PAE_hih
PAE_midh
PAE_lowh
Icc_hih
Icc_midh
Icc_lowh
ACLR1_hih
ACLR2_hih
ACLR1_midh
ACLR2_midh
ACLR1_lowh
ACLR2_lowh
Condition
High Power Mode, Pout = 27.5 dBm
Mid Power Mode, Pout = 16.0 dBm
Low Power Mode, Pout = 7.0 dBm,
Vcc = 1.5 V
High Power Mode, Pout = 27.5 dBm
Mid Power Mode, Pout = 16.0 dBm
Low Power Mode, Pout = 7.0 dBm,
Vcc = 1.5 V
High Power Mode, Pout = 27.5 dBm
Mid Power Mode, Pout = 16.0 dBm
Low Power Mode, Pout = 7.0 dBm,
Vcc = 1.5 V
High Power Mode, Pout = 27.5 dBm
Mid Power Mode, Pout = 16 dBm
Low Power Mode, Pout = 7 dBm,
Vcc = 1.5 V
Min. Typ. Max. Unit
1920 – 1980 MHz
23.5 26.5
dB
14.5 17.5
dB
9.5 12..5
dB
34 38.8
16.4 21.7
9.6 14.3
%
%
%
425 485 mA
53 70 mA
22 33 mA
-40 -37 dBc
-55 -47
-44 -37 dBc
-56 -47 dBc
-40 -37 dBc
-56 -47 dBc
Notes:
1. Electrical characteristics are specified under HSDPA modulated Up-Link signal (DPCCH/DPDCH = 12/15, HS-DPCCH/DPDCH = 15/15).
2. ACP is expressed as a ratio of total adjacent power to signal power, both with 3.84 MHz bandwidth at specified offsets.
4
4페이지 Characteristics Data (HSDPA, Control Scheme: 3-Mode Control, Vcc = 3.4/1.5 V, Vref = 2.85 V, T=25°C, Zin/Zout = 50 Ω)
500
450 1920 MHz
400 1950 MHz
350 1980 MHz
300
250
200
150
100
50
0
-10 -5 0 5 10 15 20 25 30
Pout (dBm)
30
25
20
15
10 1920 MHz
1950 MHz
5 1980 MHz
0
-10 -5 0 5 10 15 20 25 30
Pout (dBm)
Figure 11. Total current vs. output power
Figure12. Gain vs. output power
45
40 1920 MHz
35 1950 MHz
30 1980 MHz
25
20
15
10
5
0
-10 -5 0 5 10 15 20 25 30
Pout (dBm)
Figure 13. Power added efficiency vs. output power
-30
-35
-40
-45
-50 1920 MHz
1950 MHz
-55 1980 MHz
-60
-10 -5 0 5 10 15 20 25 30
Pout (dBm)
Figure 14. Adjacent channel leakage ratio 1 vs. output power
-40
1920 MHz
-45
1950 MHz
-50
1980 MHz
-55
-60
-65
-70
-75
-10 - 5 0 5 10 15 20 2 5 30
Pout (d B m)
Figure 15. Adjacent channel leakage ratio 2 vs. output power
7
7페이지 | |||
구 성 | 총 20 페이지수 | ||
다운로드 | [ WS2512-TR1G.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
WS2512-TR1G | 4 x 4 Power Amplifier Module | Avago |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |