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부품번호 | BT131-800D 기능 |
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기능 | Triacs logic level | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BT131 series D and E
Triacs logic level
Rev. 3 — 3 November 2011
Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate triacs in a SOT54 plastic package.
1.2 Features and benefits
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
1.3 Applications
General purpose switching and phase control
1.4 Quick reference data
VDRM 600 V (BT131-600D)
VDRM 800 V (BT131-800D)
IT(RMS) 1 A
VDRM 600 V (BT131-600E)
VDRM 800 V (BT131-800E)
ITSM 12.5 A
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
Description
main terminal 2 (T2)
gate (G)
main terminal 1 (T1)
Simplified outline
Symbol
T2
sym051
T1
G
321
SOT54 (TO-92)
NXP Semiconductors
BT131 series D and E
Triacs logic level
103
ITSM
(A)
102
(1)
003aab040
IT ITSM
t
T
Tj = 25 °C max
(2)
10
10−5
10−4
10−3
10−2
tp (s)
10−1
tp 20 ms
(1) dIT/dt limit
(2) T2 G+ quadrant
Fig 3. Non-repetitive peak on-state current as a function of pulse duration for sinusoidal currents; maximum
values
3
IT(RMS)
(A)
2
003aab042
1.2
IT(RMS)
(A)
0.8
003aab039
51.2 °C
1 0.4
0
10−2
10−1
1 10
surge duration (s)
Fig 4.
f = 50 Hz; Tlead 51.2 C
RMS on-state current as a function of surge
duration, for sinusoidal currents; maximum
values
0
−50 0 50 100 150
Tlead (°C)
(1) Tlead = 51.2 C
Fig 5. RMS on-state current as a function of lead
temperature; maximum values
BT131_SER_D_E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
4 of 13
4페이지 NXP Semiconductors
BT131 series D and E
Triacs logic level
1.6
VGT(Tj)
VGT(25°C)
1.2
0.8
003aab043
3
IGT(Tj)
IGT(25°C)
(1)
2
(2)
(3)
(4)
1
003aab044
0.4
−50
0
50 100 150
Tj (°C)
Fig 7. Normalized gate trigger voltage as a function
of junction temperature
0
−50 0
(4)
(3)
(2)
(1)
50 100 150
Tj (°C)
(1) T2 G+
(2) T2 G
(3) T2+ G
(4) T2+ G+
Fig 8. Normalized gate trigger current as a function
of junction temperature
2
IT
(A)
1.6
1.2
003aab037
3
IL
IL(25°C)
2
001aab100
0.8 (1)
(2)
(3)
0.4
0
0 0.4 0.8 1.2 1.6 VT (V) 2
Vo = 0.92 V
Rs = 0.4 .
(1) Tj = 125 C; typical values
(2) Tj = 125 C; maximum values
(3) Tj = 25 C; maximum values
Fig 9. On-state current characteristics
1
0
−50 0
50 100 150
Tj (°C)
Fig 10. Normalized latching current as a function of
junction temperature
BT131_SER_D_E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
7 of 13
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BT131-800 | Triacs | Inchange Semiconductor |
BT131-800 | Triacs logic level | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |